Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Michitaka Yoshino"'
Publikováno v:
Micromachines, Vol 15, Iss 1, p 147 (2024)
Mg-ion-implanted layers in a GaN substrate after annealing were investigated. Implanted Mg atoms precipitated along the edges of crystal defects were observed using 3D-APT. The breakdown characteristics of a GaN double-diffused vertical MISFET (DMISF
Externí odkaz:
https://doaj.org/article/27fe2a5690bb448fb62018d92f752d8f
Autor:
Kanata Fukagawa, Kazuhiro Shouno, Hiroshi Tanimoto, Cosy Muto, Michitaka Yoshino, Seijiro Moriyama, Chikau Takahashi
Publikováno v:
2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b8ff2ab4504a1fca8e4c2cc22d2987
https://doi.org/10.1109/itc-cscc55581.2022.9895003
https://doi.org/10.1109/itc-cscc55581.2022.9895003
Autor:
Lina Sato, Kazuhiro Shouno, Hiroshi Tanimoto, Cosy Muto, Michitaka Yoshino, Seijiro Moriyama, Chikau Takahashi
Publikováno v:
2022 37th International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21eeb139823a92ff2b5ccea0d14b2706
https://doi.org/10.1109/itc-cscc55581.2022.9894904
https://doi.org/10.1109/itc-cscc55581.2022.9894904
This paper proposes a multi-bit ΔΣ down-converting analog-to-digital converter (DC-ADC) using an even harmonic mixer (EHMIX) and mismatch shaper to realize software radios and digital radio frequencies. This converter achieves high signal-to-noise-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cb996537fc4b3627a97d1f731ca3185
https://doi.org/10.21203/rs.3.rs-1610320/v1
https://doi.org/10.21203/rs.3.rs-1610320/v1
Autor:
Kiyoji Ikeda, Tomoaki Nishimura, Michitaka Yoshino, Tohru Nakamura, Kazuo Kuriyama, Kota Sugamata
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 449:49-53
A new activation annealing technology that can efficiently and uniformly heat the ion implanted transparent GaN substrates was developed. Annealing temperature was reduced by 80–50 °C using the GaN substrates coated with the carbon film on the bac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221ab709723a852f381a67862dae2d92
https://doi.org/10.1016/j.nimb.2019.04.008
https://doi.org/10.1016/j.nimb.2019.04.008
Publikováno v:
Surface and Coatings Technology. 355:7-10
Ion implantation is a widely used doping technique for Si MOSFETs, but there have been few reports that demonstrate the formation of p-type GaN layer. We have succeeded to make the p-n junction by implanting Mg ions into n-type GaN layer, but Mg impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f90c1a3d3bd3b04ce375a4139feefb
https://doi.org/10.1016/j.surfcoat.2018.04.018
https://doi.org/10.1016/j.surfcoat.2018.04.018
Autor:
Kazuo Kuriyama, Michitaka Yoshino, Tohru Nakamura, Hirofumi Tsuge, Kiyoji Ikeda, Kota Sugamata
Publikováno v:
Materials Science Forum. 924:919-922
This paper demonstrates ion implanted lateral GaN MISFETs using double ion implantation technology, which enables us to form Si ion implanted source/drain regions in Mg ion implanted p-well fabricated on free-standing GaN substrates. Maximum drain cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::990bb4ca49906923d9b2b08da1bb5954
https://doi.org/10.4028/www.scientific.net/msf.924.919
https://doi.org/10.4028/www.scientific.net/msf.924.919
Autor:
Michitaka, Yoshino, Yuto, Ando, Manato, Deki, Toru, Toyabe, Kazuo, Kuriyama, Yoshio, Honda, Tomoaki, Nishimura, Hiroshi, Amano, Tetsu, Kachi, Tohru, Nakamura
Publikováno v:
Materials
A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f423d3118151b7f2584b50bcc3be1eb5
https://pubmed.ncbi.nlm.nih.gov/30813566
https://pubmed.ncbi.nlm.nih.gov/30813566
Autor:
Tohru Nakamura, Michitaka Yoshino, Fumimasa Horikiri, Tomoyoshi Mishima, Hiroshi Ohta, Yasuhiro Yamamoto
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 136:474-478
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4feae23a49adceb471cdc166177a39f8
https://doi.org/10.1541/ieejeiss.136.474
https://doi.org/10.1541/ieejeiss.136.474
Publikováno v:
Analog Integrated Circuits and Signal Processing. 85:243-251
We present a novel delta---sigma digital-to-analog converter (DSDAC) using a jitter shaper to augment the noise caused by clock jitter. The jitter shaper is designed for a 0.18 µm CMOS and comprises switched capacitor and sample-and-hold circuits. W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ccaaf6960a59842e53bcc746362d4a4
https://doi.org/10.1007/s10470-015-0600-5
https://doi.org/10.1007/s10470-015-0600-5