Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Michitaka Kobayashi"'
Publikováno v:
Applied Surface Science. 254:7963-7967
We have succeeded in growing semiconductor (BaSi2)/metal (CoSi2) hybrid structures epitaxially on Si(1 1 1) by molecular beam epitaxy for the first time. When the thickness of CoSi2 was approximately 55 nm, the interface between the CoSi2 and BaSi2 l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f08ac4d30ca5d77203d0fde1762fb6f
https://doi.org/10.1016/j.apsusc.2008.04.011
https://doi.org/10.1016/j.apsusc.2008.04.011
Publikováno v:
Journal of Crystal Growth. 310:1250-1255
We successfully demonstrated epitaxial growth of semiconductor (BaSi2)/metal(CoSi2) Schottky-barrier structures on Si(1 1 1), for the first time, by molecular beam epitaxy (MBE). The interface between the CoSi2 and BaSi2 layers was found to be sharp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5abe3b838cbe6751ad1b892c6428bd
https://doi.org/10.1016/j.jcrysgro.2007.12.044
https://doi.org/10.1016/j.jcrysgro.2007.12.044
Publikováno v:
Thin Solid Films. 515:8242-8245
Ga- or In-doped BaSi 2 films were grown on Si(111) by molecular beam epitaxy (MBE). The Ga-doped BaSi 2 showed n -type conductivity. The electron concentration and resistivity of the Ga-doped BaSi 2 depended on the Ga temperature; however, the electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e7257848f636d73347f2c28e7670f5
https://doi.org/10.1016/j.tsf.2007.02.050
https://doi.org/10.1016/j.tsf.2007.02.050
Publikováno v:
Journal of Crystal Growth. :680-683
[1 0 0]-Oriented epitaxial and polycrystalline Ba 1− x Sr x Si 2 films with various x values were grown by molecular beam epitaxy (MBE) on Si(1 1 1) and transparent fused silica substrates, respectively. The indirect absorption edge E edge in Ba 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0572f4fd2c9189f43cbbd38717b7e7a
https://doi.org/10.1016/j.jcrysgro.2006.11.236
https://doi.org/10.1016/j.jcrysgro.2006.11.236
Publikováno v:
Thin Solid Films. 515:8216-8218
Polycrystalline Ba 1− x Sr x Si 2 films with the Sr composition x varying from 0 to 0.77 were grown on transparent fused silica substrates by molecular beam epitaxy, and the effects of Sr addition on the indirect optical absorption edge E edge were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a384da34a9231272c3470281c182158
https://doi.org/10.1016/j.tsf.2007.02.047
https://doi.org/10.1016/j.tsf.2007.02.047
Publikováno v:
Japanese Journal of Applied Physics. 45:L519-L521
The band diagrams of the BaSi2/Si heterostructure were investigated using a Kelvin probe and its current–voltage (I–V) characteristics. Ga-doped n-type degenerate BaSi2 was grown on Si(111) by molecular beam epitaxy (MBE), and its work function,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6448e30e7c1cadacd2a289552209f355
https://doi.org/10.1143/jjap.45.l519
https://doi.org/10.1143/jjap.45.l519
Publikováno v:
Japanese Journal of Applied Physics. 45:L390-L392
Polycrystalline Ba1-xSrxSi2 films with Sr composition x varying from 0 to 0.52 were grown on transparent fused silica substrates by molecular beam epitaxy. Optical absorption spectra measured at room temperature showed that the indirect absorption ed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a7c5a0ccf1b23ea51ad180775fd1a4
https://doi.org/10.1143/jjap.45.l390
https://doi.org/10.1143/jjap.45.l390
Autor:
S. Murase, Michitaka Kobayashi, Y. Ugajin, Mitsushi Suzuno, K. Morita, Yoshitake Ichikawa, Takashi Suemasu
Publikováno v:
SPIE Proceedings.
Si/β-FeSi 2 /Si (SFS) structures with β-FeSi 2 particles on Si(001), and SFS structures with β-FeSi 2 continuous films were epitaxially grown on both Si(001) and Si(lll) substrates by molecular-beam epitaxy (MBE). All the samples exhibited the sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d5decbdd56e44b611665895005e368
https://doi.org/10.1117/12.731941
https://doi.org/10.1117/12.731941
Publikováno v:
Applied Physics Express. 1:051403
Highly a-axis-oriented n- and p-type BaSi2 films were grown on Si(111) substrates by molecular beam epitaxy using Sb and In doping atoms, respectively. The hole concentration of In-doped BaSi2 was controlled in the range between 1016 and 1017 cm-3 at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::294dbed650ff3829509c654989b2907e
https://doi.org/10.1143/apex.1.051403
https://doi.org/10.1143/apex.1.051403
Publikováno v:
Physics Procedia. :53-56
Polycrystalline BaSrSi2 layers were grown on SiO2 substrates by molecular beam epitaxy, and the local structure of the Sr in the BaSrSi2 films was investigated using extended X-ray absorption fine strcture (EXAFS) analysis. The local structure of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70de36b1f04036e3cce4a0e99cf2e0c0