Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Michio Tamate"'
Publikováno v:
IEEJ Transactions on Industry Applications. 140:433-441
Publikováno v:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe).
Publikováno v:
IEEE Transactions on Industry Applications. 55:2721-2730
The switching speeds of next-generation power semiconductor devices, such as those made of silicon carbide and gallium nitride are roughly ten times those of conventional devices (e.g., silicon insulated-gate bipolar transistors). This increases the
Publikováno v:
2019 IEEE 4th International Future Energy Electronics Conference (IFEEC).
This paper explores the relationship between filter inductor impedance and dimensional resonance in magnetic cores. Experimental results were obtained showing multiple factors behind the resonances that appear in the frequency characteristics of indu
Publikováno v:
IEEJ Transactions on Industry Applications. 137:639-646
Publikováno v:
2019 IEEE Energy Conversion Congress and Exposition (ECCE).
High switching speed in next-generation power devices such as silicon carbide allows increased switching frequencies in power converters. Higher switching frequencies increase power densities, but also increase frequencies of electromagnetic noise ac
Publikováno v:
Electrical Engineering in Japan; Jun2021, Vol. 214 Issue 2, p1-10, 10p
Publikováno v:
2018 IEEE Energy Conversion Congress and Exposition (ECCE).
Switching speed of the next-generation power devices based on the wide-bandgap semiconductors such as silicon carbide and gallium nitride are more than ten times faster than the conventional silicon insulated-gate bipolar transistors. This may increa
Publikováno v:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia).
Switching speed of next-generation power devices such as silicon carbide is about ten times faster than those of silicon devices. This aspect may increase the frequency ranges of common-mode (CM) voltage accompanied by switching operations. Meanwhile
Publikováno v:
2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia).
Power electronics equipments can cause serious electromagnetic interference (EMI) because of their high-speed switching. Such switching disturbances then propagate along power cables, which can act as antennas to radiate the noise. Typically, a passi