Výsledky vyhledávání - "Michinobu Tsuda"

Through Recess and Regrowth Gate Technology for Realizing Process Stability of GaN-Based Gate Injection Transistors

Autor: Manabu Yanagihara, Masaya Mannoh, Hideyuki Okita, Saichiro Kaneko, Michinobu Tsuda, Hisayoshi Matsuo, Kenichiro Tanaka, Yasuhiro Uemoto, Akihiko Nishio, Masayuki Kuroda, Keiichi Matsunaga, Masahiro Hikita, Takahiro Sato, Ayanori Ikoshi, Tatsuo Morita

Publikováno v: IEEE Transactions on Electron Devices. 64:1026-1031

A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN ba

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8af144d407aea0dc71d8ca99caac6e43
https://doi.org/10.1109/ted.2017.2653847

Zobrazit plný text záznamu

Influence of Ohmic Contact Resistance on Transconductance in AlGaN/GaN HEMT

Autor: Hiroshi Amano, Satoshi Kamiyama, Michinobu Tsuda, Motoaki Iwaya, Akira Honshio, Isamu Akasaki, Yoshikazu Hirose, Takeshi Kawashima

Publikováno v: IEICE Transactions on Electronics. :1064-1067

The correlation between ohmic contact resistivity (ρ c ) and transconductance (g m ) in AlGaN/GaN high-electron-mobility transistors (HEMTs) was investigated. To characterize p c precisely, we fabricated a circular transmission line model (c-TLM) pa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ecfc2081934f5a668c7b408f0fbcf5d
https://doi.org/10.1093/ietele/e89-c.7.1064

Zobrazit plný text záznamu

X-ray diffraction reciprocal lattice space mapping ofa-plane AlGaN on GaN

Autor: Hiroshi Amano, Satoshi Kamiyama, Motoaki Iwaya, Akira Honshio, Hiroko Furukawa, Isamu Akasaki, Michinobu Tsuda

Publikováno v: physica status solidi (b). 243:1524-1528

In this study, the anisotropic strain in a-plane AlGaN on GaN was investigated by X-ray diffraction (XRD) analysis using AlGaN/GaN heterostructure grown on r-plane sapphire. An a-plane GaN layer is compressively strained, particularly in the m-axis d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a9d46ff1b9c91c2ace84a68f3e6c3523
https://doi.org/10.1002/pssb.200565344

Zobrazit plný text záznamu

Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Autor: Michinobu Tsuda, Kazuyoshi Iida, G. Narita, Naoki Fujimoto, Motoaki Iwaya, Tsukasa Kitano, Hiroshi Amano, Isamu Akasaki, Krishnan Balakrishnan, Satoshi Kamiyama, Takeshi Kawashima, Yoshikazu Hirose, Kiyotaka Nakano, N. Okada, Masataka Imura

Publikováno v: physica status solidi (a). 203:1632-1635

Epitaxial lateral overgrowth (ELO) of low-dislocation-density AlN layers on trench-patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, (1010) and (11

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6f0fbbe6ec4a912bd43c5abd7258d3dc
https://doi.org/10.1002/pssa.200565389

Zobrazit plný text záznamu

Anisotropically Biaxial Strain ina-Plane AlGaN on GaN Grown onr-Plane Sapphire

Autor: Michinobu Tsuda, Akira Honshio, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, Hiroko Furukawa, Hiroshi Amano

Publikováno v: Japanese Journal of Applied Physics. 45:2509-2513

In this study, the anisotropically biaxial strain in a-plane AlGaN on GaN is investigated by X-ray diffraction (XRD) analysis using an AlGaN/GaN heterostructure grown on r-plane sapphire. In accordance with XRD reciprocal lattice space mapping, when

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb480a603f599d78ff9c26369d61f2b1
https://doi.org/10.1143/jjap.45.2509

Zobrazit plný text záznamu

Microstructure of nitrides grown on inclined c-plane sapphire and SiC substrate

Autor: Isamu Akasaki, Michinobu Tsuda, N. Tsuchiya, Motoaki Iwaya, Hiroshi Amano, Satoshi Kamiyama, Krishnan Balakrishnan, Kiyotaka Nakano, Masataka Imura, Yasuto Miyake, Y. Okadome, Akira Honshio

Publikováno v: Physica B: Condensed Matter. :491-495

High-quality ( 1 1 2 ¯ 0 ) GaN layers with atomically flat surface have been grown on a precisely offset-angle-controlled ( 1 1 ¯ 0 2 ) sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Insertion of AlGaN layer between underlying AlN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8dac78b3dd9425ffe8c6a8b8cd2598d
https://doi.org/10.1016/j.physb.2005.12.125

Zobrazit plný text záznamu

The surface treatment of sapphire substrate and its effects on the initial stage of GaN growth by MOVPE

Autor: S. Kamiyama, K. Watanabe, Hiroshi Amano, Michinobu Tsuda, Isamu Akasaki

Publikováno v: physica status solidi (c). :2163-2166

The relationships among the pretreatment of sapphire substrate by dipping into hydrofluoric acid, the subsequent hydrogen annealing and the growth mode of GaN by MOVPE were investigated. An annealing temperature higher than 900 °C is necessary to re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb7383d086be3482bc236d53419b94c6
https://doi.org/10.1002/pssc.200303364

Zobrazit plný text záznamu

Mechanism of H2 pre-annealing on the growth of GaN on sapphire by MOVPE

Autor: R Liu, Hiroshi Amano, Satoshi Kamiyama, Kenichi Watanabe, Fernando Ponce, Abigail Bell, Isamu Akasaki, Michinobu Tsuda

Publikováno v: Applied Surface Science. 216:585-589

Pre-annealing of a sapphire substrate in hydrogen atmosphere strongly affects the growth of GaN by metalorganic vapor phase epitaxy using a low-temperature (LT) deposited AlN buffer layer. In order to grow high-quality GaN, the pre-annealing temperat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::431d09052e942013c671303676acd029
https://doi.org/10.1016/s0169-4332(03)00449-5

Zobrazit plný text záznamu

Impact of H2-preannealing of the Sapphire Substrate on the Crystallization of Low-Temperature-Deposited AlN Buffer Layer

Autor: Hiroshi Amano, Motoaki Iwaya, Krishnan Balakrishnan, Satoshi Kamiyama, Isamu Akasaki, Michinobu Tsuda

Publikováno v: MRS Proceedings. 831

The effect of H2-preannealing of sapphire substrate on low-temperature (LT- ) AlN buffer layer deposited by metalorganic vapor phase epitaxy is investigated. Crystallinity of LT-AlN drastically changes with preannealing temperature variation. It is f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc20e120a50678d98cc481b0c7826509
https://doi.org/10.1557/proc-831-e8.30

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání