Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Michihiro Sano"'
Publikováno v:
Journal of Crystal Growth. 275:e2459-e2465
Polarity-controlled ZnO films with an MgO buffer layer were grown on c -plane sapphire by plasma-assisted molecular beam epitaxy (MBE). The effect of the thickness of the MgO buffer layer on the MBE growth of ZnO was investigated. The growth rate of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f29854bc95b59aa0268409b2514fa2dd
https://doi.org/10.1016/j.jcrysgro.2004.11.377
https://doi.org/10.1016/j.jcrysgro.2004.11.377
Autor:
Kazuhiro Miyamoto, Baoping Zhang, Katsuki Wakatsuki, Hiroyuki Kato, Yusaburo Segawa, Takafumi Yao, Michihiro Sano
Publikováno v:
physica status solidi (b). 241:2825-2829
High-quality Zn-polar ZnO films were grown on metal-organic chemical-vapor deposition (MOCVD) grown ZnO/a-sapphire templates by plasma-assisted molecular beam epitaxy (MBE). Annealing of the MOCVD-ZnO layer in an O 2 atmosphere improved the surface r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11de0975ec29b3d7b6f339e3ced0d120
https://doi.org/10.1002/pssb.200405055
https://doi.org/10.1002/pssb.200405055
Autor:
Z. Vashaei, Kazuhiro Miyamoto, Hang-Ju Ko, I. Yonenaga, Hiroyuki Kato, Takafumi Yao, Michihiro Sano, Meoung Whan Cho, Agus Setiawan
Publikováno v:
Journal of Applied Physics. 96:3763-3768
We have investigated the characteristic of the dislocations in the ZnO layers grown on c sapphire by the plasma-assisted molecular beam epitaxy under the different Zn∕O flux ratios. The ZnO layers were characterized by the transmission electron mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::885267fda7c4c62a7928ef99f8e00c6a
https://doi.org/10.1063/1.1785852
https://doi.org/10.1063/1.1785852
Publikováno v:
Journal of Applied Physics. 95:5527-5531
The role of hydrogen in the growth and material properties of ZnO films grown at temperature as low as 300 °C by plasma-assisted molecular beam epitaxy with and without hydrogen irradiation was investigated. Results showed that during growth, the su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772a8f30f28aa334109c0221581a4a74
https://doi.org/10.1063/1.1704868
https://doi.org/10.1063/1.1704868
High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy
Publikováno v:
Journal of Crystal Growth. 265:375-381
High-quality ZnO epilayers have been grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O-rich, the growth mode changed from three- to two-dimensional growth and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bceca6125721ebddb2cd12fe90f4a3e1
https://doi.org/10.1016/j.jcrysgro.2004.02.021
https://doi.org/10.1016/j.jcrysgro.2004.02.021
Publikováno v:
Journal of Crystal Growth. 265:34-40
High-electron-mobility ZnO epilayers are grown on c -plane sapphire with ZnO/MgO double-buffer layers by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction and transmission electron microscopy analysis showed the grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b862090e9eb0465858a02ea6d98f0af
https://doi.org/10.1016/j.jcrysgro.2004.01.035
https://doi.org/10.1016/j.jcrysgro.2004.01.035
Publikováno v:
physica status solidi (b). 241:612-615
High-quality ZnO epilayers have been grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn flux ratio from the stoichiometric to the O-rich, the growth mode changed from three- to two-dimensional growth and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe271076ae2aa1e4c52550bb8a5358f7
https://doi.org/10.1002/pssb.200304189
https://doi.org/10.1002/pssb.200304189
Publikováno v:
Japanese Journal of Applied Physics. 42:L1050-L1053
The role of surface chemistry in the growth and material properties of ZnO epilayers grown on a-plane sapphire by plasma-assisted molecular beam epitaxy is investigated. The surface chemistry of a-plane sapphire is controlled from O-rich to Al-rich b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1be95892830686ef4576d454cb082e
https://doi.org/10.1143/jjap.42.l1050
https://doi.org/10.1143/jjap.42.l1050
Publikováno v:
Japanese Journal of Applied Physics. 42:L1002-L1005
High-quality ZnO films have been grown on Zn-polar ZnO substrates by plasma-assisted molecular beam epitaxy. With increasing O/Zn ratio from the stoichiometric to the O-rich flux condition, the growth mode and the surface morphology changed from thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3a1029c5a032227b79661cf7d0c71d
https://doi.org/10.1143/jjap.42.l1002
https://doi.org/10.1143/jjap.42.l1002
Publikováno v:
Japanese Journal of Applied Physics. 42:2241-2244
The effect of O/Zn flux ratio on the crystalline quality of ZnO films grown at 700°C by plasma-assisted molecular beam epitaxy was investigated. Zinc beam flux (FZn) was varied from 2.2≤FZn≤8.3 A/s with an O2 flow rate of 3 sccm and RF power of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a9d4e54e0925622e1811ffa0fa297f3
https://doi.org/10.1143/jjap.42.2241
https://doi.org/10.1143/jjap.42.2241