Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michihiko Yamanouch"'
Publikováno v:
AIP Advances, Vol 13, Iss 1, Pp 015037-015037-4 (2023)
Spin–orbit torques (SOTs) induced magnetization switching in a perpendicularly magnetized CoFeB film deposited on a Ti/in-plane magnetized Co2MnAl stack was investigated. Deterministic switching of the CoFeB magnetization was demonstrated by applyi
Externí odkaz:
https://doaj.org/article/fdfbe8948f184b3fa7ff6c8f8a51e93c
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025205-025205-5 (2021)
We investigated spin–orbit torque (SOT) induced magnetization switching and SOT efficiency for Mn1.8Ga1.0 (MnGa) single layers and MnGa/Co2MnSi (CMS) bilayers. Magnetization measurements showed that ultrathin MnGa and CMS were antiferromagnetically
Externí odkaz:
https://doaj.org/article/5bccf921638a404fba18d33842bf1ab6
Publikováno v:
AIP Advances, Vol 10, Iss 1, Pp 015129-015129-5 (2020)
We investigate the current-induced effective magnetic field Heff in La0.67Sr0.33MnO3 (18)/LaAlO3(0,2,6)/SrTiO3 (LSMO/LAO/STO) structures by using the planar Hall effect (PHE), where numbers in parentheses give the nominal thickness of the given layer
Externí odkaz:
https://doaj.org/article/82d9a144ad414a23b5ca05d7770dcdb5
Autor:
Michihiko Yamanouchi, Nguyen Viet Bao, Fumiaki Shimohashi, Kohey Jono, Masaki Inoue, Tetsuya Uemura
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125245-125245-4 (2019)
We investigate the magnetic properties and spin-orbit-torque-induced (SOT-induced) magnetization switching in Ta/MnGa/Cr and Ta/MnGa/NiAl structures. Out-of-plane hysteresis loops for the Ta/MnGa/Cr (NiAl) structures are skewed (square). In-plane cur
Externí odkaz:
https://doaj.org/article/2631479a1c83480382750141d9b2574b
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035129-035129-4 (2019)
We have investigated the planar Hall effect (PHE) and the anisotropic magnetoresistance (AMR) in La0.67Sr0.33MnO3/LaAlO3/SrTiO3 (LSMO/LAO/STO) and LSMO/STO structures, where the LSMO (LAO) thickness was 13 unit cells (u.c.) and 18 u.c. (8 u.c. and 6
Externí odkaz:
https://doaj.org/article/b2829c004b624364ae94480d9103b12e
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.