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pro vyhledávání: '"Michiharu Matsui"'
Autor:
Masayuki Ichige, Atsuhiro Sato, Masaaki Higashitani, M. Momodomi, Hisataka Meguro, Shigeki Takahashi, H. Iizuka, Tadashi Iguchi, R. Shirota, N. Arai, T. Miwa, Takeshi Kamigaichi, N. Kawai, S. Miyazaki, S. Tamon, T. Minami, Michiharu Matsui, Tuan Pham, Yoshiaki Takeuchi, G. Hemink, H. Kamata, Y. Ishibashi, Kikuko Sugimae, Hiroyuki Kutsukake, S. Mori, Masanobu Saito
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Recently, the new memory structures, those FG and AA are completely self aligned, are qualified for 4Gb NAND flash memory in 90 nm technology node. This paper describes that the new structures and these electrical characteristics and also peripheral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a39d948fdea82af3af180691174d3b3
https://doi.org/10.1109/vlsit.2003.1221100
https://doi.org/10.1109/vlsit.2003.1221100
