Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Michiel Blauw"'
Publikováno v:
Sensor Letters. 12:1526-1529
Autor:
Mikhail R. Baklanov, Patrick Verdonck, Mikhail Krishtab, Silvia Armini, Michiel Blauw, Herbert Struyf, Thierry Conard, Jana Loyo Prado, Johan Swerts, Johan Meersschaut
Publikováno v:
Microelectronic Engineering. 120:240-245
Self-assembled monolayers (SAMs) derived from 11-cyanoundecyltrichlorosilane precursor are deposited in vapor phase and characterized on ultra-low- k Chemical Vapor Deposition (CVD) dielectric films ( k = 2.0) with open porosity up to 50% and pore di
Autor:
Devrez Mehmet Karabacak, Michiel Blauw, Zeng Zeng, Mercedes Crego Calama, Rob van Schaijk, Van Anh T. Dam, Roman Vitushinsky, R. J. M. Vullers, Sywert Brongersma, Marcel A. G. Zevenbergen
Publikováno v:
physica status solidi c. 11:46-49
Western societies all see their healthcare costs outpace GDP growth. To reverse this trend, several public and private initiatives were taken in the last years to make healthcare more cost efficient. It is anticipated that micro and nano-system techn
Publikováno v:
ECS Transactions. 50:137-140
Accurate control over film thickness and morphology, as can be obtained by atomic layer deposition, provides an effective means to reduce the operating temperature of metal oxide based gas sensors. Room temperature operation has been achieved with a
Autor:
J. Loyo Prado, Michiel Blauw, Johan Meersschaut, Patrick Verdonck, Silvia Armini, M. R. Baklanov, Mikhail Krishtab, Yiting Sun, J. Swerts
Publikováno v:
ECS Solid State Letters. 1:P42-P44
Due to its excellent step coverage characteristics, atomic layer depositions (ALD) deposit their material not only on top of underlying surfaces but also into the pores of porous low-k films. In this study, the film characteristics caused by pre-trea
Autor:
Mikhail R. Baklanov, Christophe Detavernier, Steven De Feyter, Elisabeth Levrau, Johan Meersschaut, Herbert Struyf, Silvia Armini, Yiting Sun, Patrick Verdonck, Michiel Blauw
Publikováno v:
MRS Proceedings. 1559
In this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface,
Autor:
J. Musschoot, Mercedes Crego-Calama, Michiel Blauw, Christophe Detavernier, Sywert Brongersma, V.A.T. Dam
Publikováno v:
2011 IEEE SENSORS Proceedings.
ZnO thin films for O 2 sensing were obtained with atomic layer deposition (ALD) and treated with rapid thermal annealing (RTA). The response of the ZnO conductivity to O 2 exposure is reversible at 270 °C. The sensitivity and responsivity are increa
Publikováno v:
ECS Meeting Abstracts. :1882-1882
not Available.