Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michelle Tng"'
Autor:
Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Pouyan Keshavarzian, Shyue Seng Tan, Michelle Tng, Louis Lim, Vinit Dhulla, Elgin Quek, Myung-Jae Lee, Edoardo Charbon
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell is pass
Autor:
Michelle Tng, Elgin Quek, Pouyan Keshavarzian, Francesco Gramuglia, Shyue Seng Tan, Ekin Kizilkan, Edoardo Charbon, Claudio Bruschini, Myung-Jae Lee
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-10
CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling
Autor:
Pouyan Keshavarzian, Francesco Gramuglia, Ekin Kizilkan, Claudio Bruschini, Shyue Seng Tan, Michelle Tng, Daniel Chong, Elgin Quek, Myung-Jae Lee, Edoardo Charbon
Publikováno v:
Advanced Photon Counting Techniques XVI.
Autor:
Won-Yong Ha, Eunsung Park, Doyoon Eom, Hyo-Sung Park, Daniel Chong, Shyue Seng Tan, Michelle Tng, Elgin Quek, Claudio Bruschini, Edoardo Charbon, Woo-Young Choi, Myung-Jae Lee
Publikováno v:
Optics Express. 31:13798
This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOS-DMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well
Autor:
Shesh Mani Pandey, Michelle Tng, Muhammad Rahman, Francis Benistant, Jin Cho, L. Jiang, Baofu Zhu, Jiseok Kim, Yumi Park, Pei Zhao, Peijie Feng, Edmund Banghart, Sudarshan Narayanan, Bingwu Liu
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
This work demonstrated a novel method utilizing Sentaurus Technology Computer Aided Design simulation along with experiments to intermediately extract Schottky barrier height and contact resistance in FinFETs. The proposed algorithm can automatically
Autor:
Pouyan Keshavarzian, Karthick Ramu, Duy Tang, Carlos Weill, Francesco Gramuglia, Shyue Seng Tan, Michelle Tng, Louis Lim, Elgin Quek, Denis Mandich, Mario Stipčević, Edoardo Charbon
Quantum random number generators (QRNGs) are a burgeoning technology used for a variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with an extraction or bit generation circuit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0141d89a471bd34e6cb2677ff833f498
https://infoscience.epfl.ch/record/303318
https://infoscience.epfl.ch/record/303318