Zobrazeno 1 - 10
of 193
pro vyhledávání: '"Michele Stucchi"'
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 11:1073-1080
Reliability results obtained on a photosensitive polymer-based redistribution layer (RDL) process with two-metal layers and a target pitch below $4~\mu \text{m}$ are presented. Fully processed samples have been subjected to 1000 h of high-temperature
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 70:1-7
We report a scanning photocapacitance microscopy technique for the localization of open electrical defects in hybrid bonding wafer-to-wafer (W2W) interconnect structures for 3-D system integration. Whereas the well-known optical beam induced resistan
Autor:
Joeri De Vos, Michele Stucchi, Eric Beyne, Stefaan Van Huylenbroeck, Ingrid De Wolf, Kristof J. P. Jacobs, Yunlong Li
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 10:1542-1551
We report laser-based fault isolation methodologies for the localization of open and short failures in $1 \times 5\,\,\mu \text{m}$ via-last through-silicon via (TSV) structures for 3-D system-on-chip (SoC) integration. Due to the photosensitive TSV
Autor:
Joeri De Vos, Huma Ashraf, Eric Beyne, Gerald Beyer, F. Schleicher, Geert Van der Plas, Michele Stucchi, Kerry Roberts, Dave Thomas, Anne Jourdain, Edward Walsby, Andy Miller, Emmanuel Chery
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
This paper presents a novel approach for extreme wafer thinning on carrier followed by nano-scale via-last formation in order to achieve sub-500nm pitch interconnects, electrically connecting the backside to the frontside of a device wafer. Indeed, i
Publikováno v:
2020 IEEE 70th Electronic Components and Technology Conference (ECTC).
We present the reliability results obtained on a two-metal level copper RDL patterned on a photosensitive polymer with a target pitch below 4 μm. Our polymer has been submitted to high temperature storage at 150 °C and to temperature humidity stres
Publikováno v:
ETS
Resistance measurements of vertical interconnect elements by cross-bridge Kelvin resistors can yield values far below the expected value, if that resistance is calculated with the simple formula based on resistivity, interconnect length, and cross-se
Autor:
Julien Ryckaert, Eric Beyne, Rongmei Chen, G. Van der Plas, G. Sisto, Peter Debacker, Rogier Baert, Pieter Weckx, Soon-Wook Kim, Shairfe Muhammad Salahuddin, Michele Stucchi, M. H. Na, Dragomir Milojevic
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM)
We present local & global SRAM macro optimizations for 3nm FinFET and 2nm Nanosheet using Face-to-Face (F2F) and Wafer-to-Wafer (W2W) hybrid bonding at sub 1um pitch. Bonding pad parasitics are measured experimentally to calibrate RC models of the pa
Autor:
Joeri De Vos, Kristof Croes, Geert Van der Plas, Eric Beyne, Michele Stucchi, Yunlong Li, Anne Jourdain
Publikováno v:
IEEE Transactions on Electron Devices. 65:1473-1479
The metal–insulator–semiconductor capacitor formed by a through-silicon via (TSV) with its insulating layer and the p-type Si substrate may show an anomalous inversion behavior in the ${C}$ – ${V}$ characteristic. The dominant cause is the pres
Autor:
Eric Beyne, Tom Van der Donck, Joke De Messemaeker, Olalla Varela Pedreira, Philippe Roussel, Stefaan Van Huylenbroeck, Michele Stucchi, Ingrid De Wolf, Kristof Croes
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:549-559
Cu pumping is defined as the irreversible extrusion of Cu from Cu-filled through-silicon vias (TSVs) exposed to high temperatures. The distribution of Cu pumping values over the TSVs of a single wafer has a large intrinsic spread. In previous publica