Total Ionizing Dose Effects in 3-D NAND Flash Memories

Autor: Michele Muschitiello, Alessandra Costantino, Marta Bagatin, S. Beltrami, Simone Gerardin, Alessandro Paccagnella, Ali Zadeh, Veronique Ferlet-Cavrois

Publikováno v: IEEE Transactions on Nuclear Science. 66:48-53

The effects of total ionizing dose on 3-D flash memories irradiated with gamma rays are investigated. The evolution and shape of threshold voltage distributions are studied versus dose for floating gate cell NAND arrays with vertical-channel architec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a6bace015b4c1e6aa018a28ceb52eaf
https://doi.org/10.1109/tns.2018.2878911

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

Autor: Jordan Calcutt, Hermann Stieglauer, Andrew Barnes, Ali Zadeh, Veronique Ferlet-Cavrois, Christian Poivey, Arto Javanainen, Michele Muschitiello, Pawel Kupsc, Kay-Obbe Voss

Publikováno v: IEEE Transactions on Nuclear Science. 65(2):732-738

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2214999259cba19d1ec54835d193e6ff
http://juuli.fi/Record/0330892518

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

Autor: Ronald D. Schrimpf, Francesco Pintacuda, Marek Turowski, Alexandre Louis Bosser, Michele Muschitiello, C.J. Nicklaw, Robert A. Weller, Kenneth F. Galloway, Veronique Ferlet-Cavrois, Robert A. Reed, Ari Virtanen, Arto Javanainen, Jean-Marie Lauenstein

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, 64 (8), pp.2031-2037. ⟨10.1109/TNS.2017.2717045⟩

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages ap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a2d4c67994a2bad8ae913d9957f17bb
http://juuli.fi/Record/0285128517

SEGR and PIGS Failure Analysis of SiC Mosfet

Autor: E. Vitanza, S. Massett, Vincenzo Cantarella, Francesco Pintacuda, Michele Muschitiello

Publikováno v: 2019 European Space Power Conference (ESPC).

This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::731e09a76fe84f990da8befa3110b862
https://doi.org/10.1109/espc.2019.8931999

A Comparison of Single-Event Transients in Pristine and Irradiated ${{\rm Al}_{0.3}}{{\rm Ga}_{0.7}}{{\rm N}/{\rm GaN}}$ HEMTs using Two-Photon Absorption and Heavy Ions

Autor: Ani Khachatrian, Michele Muschitiello, S. P. Buchner, Karl D. Hobart, Andrew D. Koehler, Travis J. Anderson, Bradley D. Weaver, Dale McMorrow, Nicolas J.-H. Roche, V. Ferlet-Cavrois

Publikováno v: IEEE Transactions on Nuclear Science. 62:2743-2751

Single-event transients (SETs) were investigated in Al 0.3 Ga 0.7 N/GaN high-electron-mobility transistors (HEMTs) using optical excitation via two-photon absorption and by heavy ions. The amplitudes and widths of the SETs were found to depend on a n

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd78f5b185b982ee18b44d602c64693a
https://doi.org/10.1109/tns.2015.2498286