Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Michel Vallet"'
Publikováno v:
Bruit et vibrations.
Depuis plusieurs decennies, les enquetes menees en France indiquent qu’un tiers de la population citadine francaise se declare genee par les nuisances sonores provenant des transports. Ce bruit, issu de differentes sources telles que les avions, le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::472e1b4f7a83293f95866fa58f108dc8
https://doi.org/10.51257/a-v2-br2005
https://doi.org/10.51257/a-v2-br2005
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a study about the invasiveness of 1340 nm continuous wave laser used for electrical failure analysis on 28 nm advanced technologies. It underlines the potential laser-induced degradation for deep submicron technologies that could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95bcf9cddb113087ae2a4fb3ea40552c
https://doi.org/10.31399/asm.cp.istfa2016p0061
https://doi.org/10.31399/asm.cp.istfa2016p0061
Autor:
Sanford Fidell, Vincent Mestre, B F Berry, Michel Vallet, Paul D. Schomer, Timothy Reid, Truls Gjestland
Publikováno v:
The Journal of the Acoustical Society of America. 131:2772-2786
Fidell et al. [(2011), J. Acoust. Soc. Am. 130(2), 791-806] have shown (1) that the rate of growth of annoyance with noise exposure reported in attitudinal surveys of the annoyance of aircraft noise closely resembles the exponential rate of change of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6692ef364b31d1bb0222a2bd61e7217
https://doi.org/10.1121/1.3688762
https://doi.org/10.1121/1.3688762
Publikováno v:
Microelectronics Reliability. 51:1646-1651
Static and dynamic techniques for defect location are well established in the failure analysis flow of a failing integrated circuit. When a circuit shows an overconsumption on power supply, the useful static techniques are laser stimulation (OBIRCH,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a74d2485451c885ad162d5f226845f6a
https://doi.org/10.1016/j.microrel.2011.06.056
https://doi.org/10.1016/j.microrel.2011.06.056
Autor:
Guillaume Celi, Sylvain Dudit, Thierry Parrassin, Emmanuel Bechet, Antoine Reverdy, Philippe Perdu, Michel Vallet, Dean Lewis
Publikováno v:
Microelectronics Reliability. 50:1499-1505
For very deep submicron technologies, 45 nm and less, bridge defects are getting more and more complex and critical. In order to find the exact root cause, accurate defect localization, precise understanding on the nature of the defect and its impact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::229374104bd328b8fb4d281cdb9e1c33
https://doi.org/10.1016/j.microrel.2010.07.115
https://doi.org/10.1016/j.microrel.2010.07.115
Autor:
J. Beltritti, Philippe Galy, M. Bilinski, R. Chevallier, Sylvain Dudit, V. Varo, Frank Jezequel, C. Boutonnat, Ph. Larre, E. Petit, Michel Vallet, Jean Jimenez, Alexandre Dray
Publikováno v:
Microelectronics Reliability. 50:1388-1392
The main purpose of this paper is to present typical silicon signatures induced by charged device stress and to discuss the nature of failures. This first inventory is elaborated on advanced CMOS–BICMOS technologies until C32 nm dual oxide. It is w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9d27ebad3f1758ee058aebc4f1b9edb
https://doi.org/10.1016/j.microrel.2010.07.137
https://doi.org/10.1016/j.microrel.2010.07.137
Autor:
Michel Vallet, J. Beltritti, Philippe Galy, E. Petit, Sylvain Dudit, Christophe Entringer, C. Richier, Frank Jezequel
Publikováno v:
Microelectronics Reliability. 49:1107-1110
The main purpose of this article is to present some silicon signatures induced by electro-static discharge (ESD) stresses and to propose to approach it with 2D and 3D TCAD simulations and under simplifying assumptions. All test chips are stressed by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d223e9c70161adc1359837d89994874
https://doi.org/10.1016/j.microrel.2009.07.039
https://doi.org/10.1016/j.microrel.2009.07.039
Autor:
Christophe Suzor, Nelly Feldman, Olivia Riewer, Salvatore Talluto, Michel Vallet, Emek Yesilada, Jean-Christophe Le Denmat
Publikováno v:
SPIE Proceedings.
Starting from the 45nm technology node, systematic defectivity has a significant impact on device yield loss with each new technology node. The effort required to achieve patterning maturity with zero yield detractor is also significantly increasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da880dd2bce02c8e004e61f523dbb169
https://doi.org/10.1117/12.2085307
https://doi.org/10.1117/12.2085307
Publikováno v:
International Symposium for Testing and Failure Analysis.
By adding a transmission grating into the optical path of our photon emission system and after calibration, we have completed several failure analysis case studies. In some cases, additional information on the emission sites is provided, as well as u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4b40109d268b5e27a0349747ee36635
https://doi.org/10.31399/asm.cp.istfa2014p0115
https://doi.org/10.31399/asm.cp.istfa2014p0115
Autor:
Philippe Sardin, Michel Vallet
Publikováno v:
Microelectronic Engineering. 49:157-167
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9173d1629fccf8f6b1d333c42f01b8c9
https://doi.org/10.1016/s0167-9317(99)00436-0
https://doi.org/10.1016/s0167-9317(99)00436-0