Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Michel Stanislawiak"'
Autor:
Maxime Olivier, David Leclerc, Marc Camiade, Clement Tolant, Zineb Ouarch Provost, Laurent Caille, Michel Stanislawiak
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
A robust full-MMIC S-band Low Noise Amplifier including power limiter based on envelope detector and Cold FET power reflector is presented. The robust LNA is based on $0.25 \mu m$ UMS GaN technology and exhibits high Input Power-handling up to 40W ov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51df942dbd2c14879831f493ad764e66
https://doi.org/10.23919/eumic.2019.8909569
https://doi.org/10.23919/eumic.2019.8909569
Autor:
Tibault Reveyrand, Michel Stanislawiak, Jerome Cheron, Denis Barataud, Didier Floriot, Philippe Eudeline, Michel Campovecchio
Publikováno v:
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2012, 4 (5), pp.495-503. ⟨10.1017/S1759078712000530⟩
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2012, 4 (5), pp.495-503. ⟨10.1017/S1759078712000530⟩
International audience; The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cd5ec5574109dba3840d71984148a8c4
https://doi.org/10.1017/s1759078712000530
https://doi.org/10.1017/s1759078712000530
Autor:
Michel Stanislawiak, Yves Mancuso, Jean-Claude Jacquet, Erwan Morvan, Zineb Ouarch, G. Callet, Benoit Mallet-Guy, Jérémy Dufraisse, Christian Dua, Stéphane Piotrowicz, Raphaël Aubry, Eric Chartier, Didier Floriot, Sylvain Delage, Marie-Antoinette Poisson, M. Oualli, Olivier Jardel, N. Sarazin
Publikováno v:
International Journal of Microwave and Wireless Technologies. 2:105-114
The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process developmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30d74a1223d54e52259b01c9d46c263
https://doi.org/10.1017/s1759078710000061
https://doi.org/10.1017/s1759078710000061
Publikováno v:
Annales Des Télécommunications. 54:290-296
Le developpement des telecommunications avec les mobiles requiert l’implantation de nombreuses stations de base (BTS) afin de couvrir les multiples cellules constituant un reseau. Les frequences porteuses utilisees dans les reseaux actuels (GSM, DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d83695188ba276288c90b117886695a
https://doi.org/10.1007/bf02995539
https://doi.org/10.1007/bf02995539
Autor:
Tibault Reveyrand, Michel Stanislawiak, Philippe Eudeline, Didier Floriot, Jerome Cheron, Michel Campovecchio, Denis Barataud
Publikováno v:
International Journal of Microwave and Wireless Technologies
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩
International Journal of Microwave and Wireless Technologies, Cambridge University Press/European Microwave Association 2013, 5 (4), pp.437-445. ⟨10.1017/S1759078713000032⟩
International audience; This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b187cce8a746bc3430d016297ce47e80
https://hal-unilim.archives-ouvertes.fr/hal-00911156
https://hal-unilim.archives-ouvertes.fr/hal-00911156
Autor:
Stéphane Piotrowicz, Olivier Jardel, Philippe Eudeline, M.-A. di Forte Poisson, Michel Stanislawiak, D. Rimbert, D. Lancereau, N. Sarazin, Eric Chartier, Maxime Olivier, Raphaël Aubry, Sylvain Delage
Publikováno v:
2012 42nd European Microwave Conference.
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34 W, 50% PAE with ~20.5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7516553edc498ee214c2f851e5359b2e
https://doi.org/10.23919/eumc.2012.6459166
https://doi.org/10.23919/eumc.2012.6459166
Autor:
Didier Floriot, Michel Campovecchio, Philippe Eudeline, Jerome Cheron, Tibault Reveyrand, Sébastien Mons, Michel Stanislawiak, Denis Barataud
Publikováno v:
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012)
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012), Sep 2012, Dublin, Germany. pp.1-3, ⟨10.1109/INMMIC.2012.6331923⟩
Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMIC 2012), Sep 2012, Dublin, Germany. pp.1-3, ⟨10.1109/INMMIC.2012.6331923⟩
International audience; This paper reports a package synthesis method in order to ensure good performances in PAE, output power and bandwidth. The internal matching circuits of the optimized package enable to reach the best impedance pre-matching at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e46d69904afec3ad88f62149dce72a7c
https://hal.archives-ouvertes.fr/hal-00793469
https://hal.archives-ouvertes.fr/hal-00793469
Autor:
Michel Stanislawiak, Cédric Duperrier, Philippe Eudeline, Farid Temcamani, Jean Baptiste Fonder, Hichame Maanane, Olivier Latry
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
Microelectronics Reliability, Elsevier, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
Microelectronics Reliability, 2012, In press. ⟨10.1016/j.microrel.2012.04.024⟩
International audience; AlGaN/GaN HEMTs are on the way to lead the RF-power amplification field according to their outstanding performances. However, due to its relative youth, reliability studies in several types of operating conditions allow to und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::269f77ad544d970794e87ed7e01fd564
https://hal.archives-ouvertes.fr/hal-00735899
https://hal.archives-ouvertes.fr/hal-00735899
Autor:
Brayima Dakyo, Philippe Eudeline, Jean-Pierre Sipma, Sega Gueye, Sylvain Alves, Michel Stanislawiak, Maxime Olivier
Publikováno v:
IET International Conference on Radar Systems (Radar 2012).
The power transistors such as technologies LDMOS and GaN are used in radar transmitters. The pulse to pulse stability which is an important feature of radar transmitters is characterized by the level of phase and amplitude variation between successiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4905284f64ada892c9297a76d247e4c7
https://doi.org/10.1049/cp.2012.1650
https://doi.org/10.1049/cp.2012.1650
Autor:
Tibault Reveyrand, Jerome Cheron, Philippe Eudeline, Michel Stanislawiak, Didier Floriot, Denis Barataud, Michel Campovecchio
Publikováno v:
IEEE MTT-S Digest, IMS 2012
IEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal-Canada, United States. pp.TH2D-2
IEEE MTT-S Digest, IMS 2012, Jun 2012, Montréal-Canada, United States. pp.TH2D-2
This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c13198146505eb1af3d8d5b2e9a3edbb
https://hal-unilim.archives-ouvertes.fr/hal-00707898
https://hal-unilim.archives-ouvertes.fr/hal-00707898