Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Michel Lestrade"'
Publikováno v:
2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).
In this paper, the FDFD is used to analyze Vertical Cavity Surface Emitting Laser (VCSEL). Based on the structure of the VCSEL, two main models can be used; the 2.5D and the 3D Finite Difference Frequency Domain (FDFD). The full vectorial solver is w
Publikováno v:
Semiconductor Lasers and Applications VIII.
In this paper, the optical problem of the Vertical Cavity Surface Emitting Laser (VCSEL) is analyzed in details. Taking advantage of the VCSEL layer structure, Maxwell’s equation is discretized on uniform Yee grid, and the rigorous full vectorial F
Publikováno v:
Physics and Simulation of Optoelectronic Devices XXV.
In this work, two-dimensional modeling of planar junction AlInAs avalanche photodiodes is reported. Modeling results of dark/photo current, multiplication gain, breakdown voltage, -3dB bandwidth and gain-bandwidth product, and excess noise etc., are
Publikováno v:
Optical and Quantum Electronics. 46:1345-1352
Non-common atom interface effects for InAs/GaSb type II superlattices and their implementation in a finite difference k.p model are discussed in this paper. We demonstrate that the additional term added to the Hamiltonian as a result of this perturba
Autor:
Wei Shi, Behnam Faraji, Mark Greenberg, Jesper Berggren, Yu Xiang, Mattias Hammar, Michel Lestrade, Zhi-Qiang Li, Z. M. Simon Li, Lukas Chrostowski
Publikováno v:
Optical and Quantum Electronics. 42:659-666
A multiple quantum well (MQW) transistor vertical-cavity surface- emitting laser (T-VCSEL) is designed and numerically modeled. The impor- tant physical models and parameters are discussed and validated by modeling a conventional VCSEL and comparing
Publikováno v:
IEEE Journal of Quantum Electronics. 40:871-877
The degradation of the side-mode suppression ratio (SMSR) in a monolithically integrated distributed feedback laser and semiconductor optical amplifier (SOA) cavity is investigated. An expression is derived that gives the degradation of the SMSR in t
Publikováno v:
IEEE Journal of Quantum Electronics. 39:897-902
We report on crosstalk reduction in conventional semiconductor optical amplifiers, obtained by reducing the number of quantum wells in the active region. While the resulting decrease in carrier lifetime is not favorable for improving gain crosstalk (
Publikováno v:
Numerical Simulation of Optoelectronic Devices.
LASTIP software was applied to simulate a classical GaN-based blue laser diodes (LD) emitting at about 410nm. Considering effects of polarization charge (PC) in this LD, theoretical simulation showed accordant results with that in experiments. On the
Autor:
Rodica Matei, Raman Kashyap, Alain Champagne, Romain Maciejko, Philippe Mercure, Michel Lestrade
Publikováno v:
Photonic Applications in Devices and Communication Systems.
The characterization of material and structural properties is essential in the development of high-performance optoelectronics devices. The gain and spontaneous emission of semiconductor emitters are intrinsically related, and knowing one determines
Publikováno v:
SPIE Proceedings.
Optical Coherence Tomography is a powerful, noninvasive biomedical technique that uses low coherence light sources to obtain in-depth scans of biological tissues. In this study, we report results obtained with three different sources: a 60 nm bandwid