Zobrazeno 1 - 10
of 163
pro vyhledávání: '"Michel, Vergnat"'
Autor:
Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loïc Foussat, Jean-Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Rémi Demoulin, Etienne Talbot, Michel Vergnat, Hervé Rinnert
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
International audience; As building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d352ee96718f818e2d7ab6718d6f882
https://hal.science/hal-04003494/document
https://hal.science/hal-04003494/document
Autor:
A. Valdenaire, Xavier Devaux, S. Geiskopf, Michel Vergnat, Cédric Carteret, Alexandre Bouché, Mathieu Stoffel, Hervé Rinnert, Erwan André
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2021, ⟨10.1021/acs.jpcc.0c11165⟩
Journal of Physical Chemistry C, American Chemical Society, 2021, ⟨10.1021/acs.jpcc.0c11165⟩
International audience; We investigate the structural and vibrational properties of Si:P thin films obtained by coevaporation of Si and P in ultra-high vacuum at room temperature followed by rapid thermal annealing. The thermal crystallization of the
Autor:
Vladimir A. Volodin, Gennadii N. Kamaev, Ivan D. Yushkov, Gregory K. Krivyakin, Svetlana G. Cherkova, Michel Vergnat
Publikováno v:
International Conference on Micro- and Nano-Electronics 2021.
Autor:
Fatme, Trad, Alaa E, Giba, Xavier, Devaux, Mathieu, Stoffel, Denis, Zhigunov, Alexandre, Bouché, Sébastien, Geiskopf, Rémi, Demoulin, Philippe, Pareige, Etienne, Talbot, Michel, Vergnat, Hervé, Rinnert
Publikováno v:
Nanoscale. 13(46)
This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO
Autor:
Michel Vergnat, Rémi Demoulin, Denis M. Zhigunov, Hervé Rinnert, Xavier Devaux, Philippe Pareige, Fatme Trad, Mathieu Stoffel, Etienne Talbot, Alexandre Bouché, Alaa E. Giba, Sebastien Geiskopf
Publikováno v:
Nanoscale
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
International audience; This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43b4097c50f21f0e3d1a5d230327d292
https://hal.science/hal-03457250/document
https://hal.science/hal-03457250/document
Autor:
Michel Vergnat, Pierre Renucci, Ziqi Zhou, Alexandre Bouché, Abdallah Jaafar, Paul Marcon, Hans Tornatzky, Hervé Rinnert, Cedric Robert, Sylvie Migot, Xavier Marie, Xavier Devaux, Mathieu Stoffel, J.-M. George, Philippe Pigeat, Rémi Arras, Yuan Lu, Zhongming Wei, L. Calmels, Lei Ren, Henri-Yves Jaffrès
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
International audience; Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e90689039e735b92f090d8e30ebce03d
https://hal.archives-ouvertes.fr/hal-03379768/document
https://hal.archives-ouvertes.fr/hal-03379768/document
Autor:
Ziqi, Zhou, Paul, Marcon, Xavier, Devaux, Philippe, Pigeat, Alexandre, Bouché, Sylvie, Migot, Abdallah, Jaafar, Rémi, Arras, Michel, Vergnat, Lei, Ren, Hans, Tornatzky, Cedric, Robert, Xavier, Marie, Jean-Marie, George, Henri-Yves, Jaffrès, Mathieu, Stoffel, Hervé, Rinnert, Zhongming, Wei, Pierre, Renucci, Lionel, Calmels, Yuan, Lu
Publikováno v:
ACS applied materialsinterfaces. 13(27)
A perpendicularly magnetized spin injector with a high Curie temperature is a prerequisite for developing spin optoelectronic devices on two-dimensional (2D) materials working at room temperature (RT) with zero applied magnetic field. Here, we report
Autor:
Frank Güell, Michel Vergnat, Hervé Rinnert, Paulina R. Martínez-Alanis, Blas Garrido, Adolf Canillas, Oriol Arteaga
Publikováno v:
Applied optics. 60(15)
The dielectric function of V O x and V 2 O 5 thin films is determined with the use of a spectroscopic Mueller matrix ellipsometer from 1.5 to 5.0 eV. The complex dielectric function of the films is calculated using the measured Mueller matrices filte
Autor:
Gennadiy N. Kamaev, Pavel Geydt, Ivan A. Azarov, A. A. Gismatulin, Igor P. Prosvirin, G. K. Krivyakin, Zhang Fan, Michel Vergnat, Vladimir A. Volodin
Publikováno v:
Electronics, Vol 9, Iss 2103, p 2103 (2020)
Electronics
Volume 9
Issue 12
Electronics
Volume 9
Issue 12
Metal&ndash
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit
insulator&ndash
semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposit