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pro vyhledávání: '"Micheal W. Newman"'
Autor:
Peter A. Thielen, J.W. McDonald, Micheal W. Newman, Thomas Schenkel, Alex V. Hamza, D. H. Schneider, Howard W. H. Lee
Publikováno v:
Applied Physics Letters. 79:2973-2975
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength (∼2 eV band gap). The silicon surfaces were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a651832b1e92652708c47d0d39a80a9
https://doi.org/10.1063/1.1413958
https://doi.org/10.1063/1.1413958
