Electronic properties of undoped microcrystalline silicon oxide films¹.

Autor: Reynolds, Steve, Michard, Stephan¹, Wang, Shuo^1,2, Smirnov, Vladimir¹

Publikováno v: Canadian Journal of Physics. Jul2014, Vol. 92 Issue 7/8, p753-757. 5p. 1 Diagram, 3 Charts, 4 Graphs.

Relation between growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon : from layer investigation to the application to thin-film tandem solar cells

Autor: Michard, Stephan Yann

Publikováno v: Jülich : Forschungszentrum Jülich, Zentralbibliothek, Schriften des Forschungszentrums Jülich : Reihe Energie & Umwelt 259, VI, 184 S. : Ill., graph. Darst. (2015). = Zugl.: Aachen, Techn. Hochsch., Diss., 2015

Investigations on the relation between the growth rate, material quality, and device grade condition for intrinsic microcrystalline silicon is presented in this thesis. Hydrogenated microcrystalline silicon deposited by plasma enhanced chemical vapor

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https://publications.rwth-aachen.de/record/464419

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Electronic properties of undoped microcrystalline silicon oxide films¹.

Autor: Reynolds, Steve, Michard, Stephan, Wang, Shuo, Smirnov, Vladimir

Publikováno v: Canadian Journal of Physics; Jul2014, Vol. 92 Issue 7/8, p753-757, 5p, 1 Diagram, 3 Charts, 4 Graphs