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pro vyhledávání: '"Michal Horovitz"'
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility. However, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::931b35687c36a3004593be775d5d35be
http://arxiv.org/abs/2109.09932
http://arxiv.org/abs/2109.09932
Autor:
Michal Horovitz, Moshe Phillip, Liora Lazar, Galia Barash, Orit Pinhas-Hamiel, Liat de Vries, Michal Baum
Publikováno v:
Endocrine practice : official journal of the American College of Endocrinology and the American Association of Clinical Endocrinologists. 28(1)
To compare clinical outcomes of 3 treatment regimens-glucocorticoids (GCs), oral contraceptives (OCs), or a combination of both-administered to adolescents and young women diagnosed in childhood with nonclassical congenital adrenal hyperplasia (NCCAH
Autor:
Eitan Yaakobi, Michal Horovitz
Publikováno v:
ISIT
Motivated by the error behavior in the DNA storage channel, in this paper, we extend the previously studied sequence reconstruction problem by Levenshtein. The reconstruction problem studies the model in which the information is read through multiple
Publikováno v:
Child Abuse & Neglect. 88:445-454
Background The transition to motherhood involves many challenges that require adjustment; included among them are adapting to body changes, forging a maternal identity, and attaching to the baby. Although these tasks may not be easy for any women, th
Autor:
Eitan Yaakobi, Michal Horovitz
Publikováno v:
IEEE Transactions on Information Theory. 63:5124-5137
Write-once memory (WOM) is a storage device consisting of $q$ -ary cells that can only increase their value. A WOM code is a coding scheme that allows writing multiple times to the memory without decreasing the levels of the cells. In the conventiona
Publikováno v:
ITW
Non-volatile resistive memories, such as phase change memories and resistive random access memories, have attracted significant attention recently due to their scalability, speed, and rewritability. However, in order to use these memories in large-sc
Publikováno v:
ISITA
Resistive memories, such as phase change memories and resistive random access memories have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility. However, their limited enduranc
Publikováno v:
SIGIR
Recent research studies on mail search have shown that the longer the query, the better the quality of results, yet a majority of mail queries remain very short and searchers struggle with formulating queries. A known mechanism to assist users in thi
Autor:
Michal Horovitz, Eitan Yaakobi
Publikováno v:
ISIT
Write-once memory (WOM) is a storage device consisting of q-ary cells that can only increase their values. A WOM code is a scheme to write messages to the memory without decreasing the cells' levels. There are four models of WOM which depend on wheth
Autor:
Eitan Yaakobi, Michal Horovitz
Publikováno v:
ITW
Write-once memory (WOM) is a storage device consisting of q-ary cells that can only increase their value. A WOM code is a coding scheme which allows one to write multiple times to the WOM without decreasing the levels of the cells. In the conventiona