Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael Whitwick"'
Autor:
Amin Abnavi, Ribwar Ahmadi, Hamidreza Ghanbari, Mirette Fawzy, Amirhossein Hasani, Thushani De Silva, Abdelrahman M. Askar, Mohammad Reza Mohammadzadeh, Fahmid Kabir, Michael Whitwick, Mario Beaudoin, Stephen K. O'Leary, Michael M. Adachi
Publikováno v:
Advanced Functional Materials. 33:2210619
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2f59fb952877da4c48d8005def781b6
https://doi.org/10.1002/adfm.202210619
https://doi.org/10.1002/adfm.202210619
Autor:
Mario Beaudoin, Rowshan Rahmanian, Amin Abnavi, Sin Hang Cheung, Michael Whitwick, Ribwar Ahmadi, Michael M. Adachi, Peng Wu, Stephen K. O’Leary
Publikováno v:
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC).
Flexible ultrathin Silicon solar cells can be widely used in different applications such as wearable electronics and smart roads. Enhancing the light absorption and bendability in Si films are critical for such applications. Here, a novel Si film wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f26137732bb6c1062c9d835d127006bc
https://doi.org/10.1109/pvsc43889.2021.9518957
https://doi.org/10.1109/pvsc43889.2021.9518957
Autor:
I.C.W. Chan, M. Elouneg-Jamroz, M. Beaudoin, Thomas Tiedje, Jeff F. Young, N. Zangenberg, Daniel A. Beaton, Erin C. Young, Michael Whitwick
Publikováno v:
Journal of Crystal Growth. 311:1662-1665
The optical absorption of GaAsN films grown by molecular beam epitaxy on GaAs substrates is measured using the mirage effect photothermal deflection spectroscopy (PDS). The PDS spectra were fitted with a modified Fernelius model, which takes into acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2c2c3beba68f81b0a87079afc7a7a9f
https://doi.org/10.1016/j.jcrysgro.2008.11.068
https://doi.org/10.1016/j.jcrysgro.2008.11.068
Publikováno v:
Journal of Crystal Growth. 310:3192-3196
The smoothing of weakly roughened GaAs (1 0 0) substrates is measured with elastic light scattering during homoepitaxial growth of GaAs buffer layers. The smoothing measurements are used to determine the coefficient of the linear term in the continuu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::519af9a3256d2e1d6a64ea0fb47dd983
https://doi.org/10.1016/j.jcrysgro.2008.03.019
https://doi.org/10.1016/j.jcrysgro.2008.03.019
Publikováno v:
Physical Review B. 79
We identify a kinetic mechanism responsible for the emergence of low-angle facets in recent epitaxial regrowth experiments on patterned surfaces. Kinetic Monte Carlo simulations of vicinal surfaces show that the preferred slope of the facets matches
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c19addda379b67dbb7303aad708e9497
https://doi.org/10.1103/physrevb.79.205419
https://doi.org/10.1103/physrevb.79.205419
Publikováno v:
Applied Physics Letters. 92:192110
We describe how the Bi content of GaAs1−xBix epilayers grown on GaAs can be controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth conditions are required because of the strong tendency for Bi to surface segregate under u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1733d3c406c74d2ff44dfcfb0d8c2fc1
https://doi.org/10.1063/1.2918844
https://doi.org/10.1063/1.2918844