Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Michael Weinl"'
Autor:
Michael Weinl, Frank Müller, Matthias Schreck, Karin Jacobs, Samuel Grandthyll, Jens-Uwe Neurohr, Bernd Uder, Anne Holtsch
The epitaxial growth of graphene via chemical vapor deposition (CVD) of an acetone/argon mixture on freestanding single-crystal Cu(111) wafers offers the possibility to produce large-scale graphene of nearly uniform orientation. These Cu(111) substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3825b232a7022e90f98eb43e408235b6
Publikováno v:
Diamond and Related Materials. 101:107606
We describe a method that allows an easy separation of a single crystal diamond layer grown by homoepitaxy in a chemical vapour deposition (CVD) process from the growth substrate. In a first step a thin SiO2 layer is deposited on top of the seed crys
Autor:
Alexander Fedorov, Mattia Scardamaglia, Simone Piccinin, Luca Petaccia, N. I. Verbitskiy, Claudia Struzzi, Alexander Grüneis, Michael Weinl, Matthias Schreck, C. S. Praveen, Stefano Fabris
Publikováno v:
Physical Review B 94 (2016): 085427. doi:10.1103/PhysRevB.94.085427
info:cnr-pdr/source/autori:Struzzi, C.; Praveen, C. S.; Scardamaglia, M.; Verbitskiy, N. I.; Fedorov, A. V.; Weinl, M.; Schreck, M.; Grueneis, A.; Piccinin, S.; Fabris, S.; Petaccia, L./titolo:Controlled thermodynamics for tunable electron doping of graphene on Ir(111)/doi:10.1103%2FPhysRevB.94.085427/rivista:Physical Review B/anno:2016/pagina_da:085427/pagina_a:/intervallo_pagine:085427/volume:94
Physical Review B
info:cnr-pdr/source/autori:Struzzi, C.; Praveen, C. S.; Scardamaglia, M.; Verbitskiy, N. I.; Fedorov, A. V.; Weinl, M.; Schreck, M.; Grueneis, A.; Piccinin, S.; Fabris, S.; Petaccia, L./titolo:Controlled thermodynamics for tunable electron doping of graphene on Ir(111)/doi:10.1103%2FPhysRevB.94.085427/rivista:Physical Review B/anno:2016/pagina_da:085427/pagina_a:/intervallo_pagine:085427/volume:94
Physical Review B
The electronic properties and surface structures of K-doped graphene supported on Ir(111) are characterized as a function of temperature and coverage by combining low-energy electron diffraction, angle-resolved photoemission spectroscopy, and density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdcd7bc26e5f104128fde1d2846ed98b
https://publications.cnr.it/doc/379361
https://publications.cnr.it/doc/379361
Autor:
Huanyao Cun, Wolf-Dietrich Zabka, Elisa Miniussi, Gerson Mette, Thomas Greber, Miroslav Haluska, Michael Weinl, Carlo Bernard, Jürg Osterwalder, Matthias Schreck, Benjamin Probst, D. Leuenberger
Publikováno v:
Journal of Physics: Condensed Matter, 29 (47)
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter
Large scale tetraoctylammonium-assisted electrochemical transfer of graphene grown on single-crystalline Ir(1 1 1) films by chemical vapour deposition is reported. The transferred samples are characterized in air with optical microscopy, Raman spectr
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 267:1394-1397
Nanopatterning of silicon surfaces by means of He+ ion implantation through self-organized colloidal masks is reported for the first time. Nanosphere lithography (NSL) masks with mask openings of 46–230 nm width were deposited on Si(1 0 0) wafers.
Autor:
Jörg K. N. Lindner, Daniel Kraus, Michael Weinl, Bernd Stritzker, Djamila Bahloul-Hourlier, Thierry Melin
Publikováno v:
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2008, 11, pp.169-174. ⟨10.1016/j.mssp.2008.09.016⟩
Materials Science in Semiconductor Processing, 2008, 11, pp.169-174. ⟨10.1016/j.mssp.2008.09.016⟩
Materials Science in Semiconductor Processing, Elsevier, 2008, 11, pp.169-174. ⟨10.1016/j.mssp.2008.09.016⟩
Materials Science in Semiconductor Processing, 2008, 11, pp.169-174. ⟨10.1016/j.mssp.2008.09.016⟩
Silicon nanowires (SiNWs) were grown on Si(1 0 0) and Si(1 1 1) substrates by chemical vapour deposition (CVD) via the vapour–liquid–solid (VLS) mechanism with small gold particles used as seeds. In order to control the diameter of nanowires, the
Autor:
Michael Weinl, Johannes Friedlein, Manfred Albrecht, Matthias Schreck, Anika Schlenhoff, Roland Wiesendanger, S. Krause, Philipp Lindner
Publikováno v:
ACS nano. 9(6)
Growth, electronic properties, and magnetic properties of an Fe monolayer (ML) on an Ir/YSZ/Si(111) multilayer system have been studied using spin-polarized scanning tunneling microscopy. Our experiments reveal a magnetic nano-skyrmion lattice, which
Autor:
W. Weber, J. Gärtner, N. I. Verbitskiy, Andrea Goldoni, Otakar Frank, Matthias Schreck, Luca Petaccia, A. V. Fedorov, Alexei Nefedov, Christof Wöll, Mirko Panighel, Hermann Sachdev, Michael Weinl, G. Di Santo, M. Kalbac, Claudia Struzzi, Alexander Grüneis
The characterization of graphene by electron and optical spectroscopy is well established and has led to numerous breakthroughs in material science. Yet, it is interesting to note that these characterization methods are almost never carried out on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9d1c51634fdff21de537e0a2495883b
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/65362
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/65362
Autor:
Florian Speck, Joost Wintterlin, Patrick Zeller, Ann-Kathrin Henß, Thomas Seyller, Matthias Schreck, Markus Ostler, Michael Weinl
Publikováno v:
Annalen der Physik. 529:1700023
Single crystalline metal films deposited on YSZ-buffered Si(111) wafers were investigated with respect to their suitability as substrates for epitaxial graphene. Graphene was grown by CVD of ethylene on Ru(0001), Ir(111), and Ni(111) films in UHV. Fo
Publikováno v:
Langmuir : the ACS journal of surfaces and colloids. 30(21)
Epitaxial graphene is expected to be the only way to obtain large-area sheets of this two-dimensional material for applications on an industrial scale. So far, there are different recipes for epitaxial growth of graphene, using either intrinsic carbo