Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Michael W Phaneuf"'
Autor:
Alyssa Williams, Maria Davola, Karen Mossman, Kathryn Grandfield, Michael W Phaneuf, Nabil Bassim
Publikováno v:
Microscopy and Microanalysis. 28:1528-1530
Publikováno v:
Microscopy and Microanalysis. 28:272-274
Autor:
Thomas Rodgers, Allen Gu, Greg Johnson, Masako Terada, Nathaniel Cohan, Vignesh Viswanathan, Michael W. Phaneuf, Joachim de Fourestier, Ethan Ruttan, Stewart McCracken, Suzanne Costello, Aidan M Robinson, Andrew Gibson, Alan Balfour
Publikováno v:
International Symposium for Testing and Failure Analysis.
Microscopic imaging and characterization of semiconductor devices and material properties often begin with a sample preparation step. A variety of sample preparation methods such as mechanical lapping and broad ion beam (BIB) milling have been widely
Autor:
John A. Notte, Tobias Volkenandt, Alexandre Laquerre, Michael W. Phaneuf, Fabian Perez-Willard, Raymond Hill
Publikováno v:
Applications of Microscopy in Materials and Life Sciences ISBN: 9789811629815
In this paper, we review selected recent innovations to focused ion beam (FIB) instrumentation. Three examples show how new inventions and refinement of existing workflows continue to expand the large application space already covered today by FIB, F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::931fd966920b3fabb2feb2051e42f197
https://doi.org/10.1007/978-981-16-2982-2_18
https://doi.org/10.1007/978-981-16-2982-2_18
Publikováno v:
Microscopy and Microanalysis. 26:1374-1375
Autor:
Andy Smith, Jonathan Gerald England, Alexandre Laquerre, Russell M. Gwilliam, Michael W. Phaneuf
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 272:409-413
We have investigated ion beam assisted crystallization as a possible method for the creation of crystalline Si layers on amorphous substrates. Ion beam assisted crystallization has previously been characterised with pulsed and modest continuous beam
Autor:
Jeff Gelb, Michael W. Phaneuf, Fabian Perez-Willard, Lorenz Lechner, Andy Steinbach, Arno Merkle, David Unrau
Publikováno v:
Microscopy and Microanalysis. 21:15-16
Autor:
Alexandre Laquerre, Dirk Schumann, Hojatollah Vali, Sebastian Fuchs, David Mayer, Neil R. Banerjee, Michael W. Phaneuf, J. Stromberg
Publikováno v:
Microscopy and Microanalysis. 20:1008-1009
Publikováno v:
International Symposium for Testing and Failure Analysis.
As semiconductor device features continue to decrease in size from merely sub micron to below 100 nanometers it becomes necessary to mill smaller and higher aspect ratio FIB vias with reduced ion beam current. This significantly reduces the number of
Publikováno v:
Pacific International Conference on Applications of Lasers and Optics.
Laser processing of glass components is of significant commercial interest for the optoelectronics and telecommunications industries. In this paper, we present laser processing techniques using microsecond, nanosecond, and femtosecond lasers for mach