Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Michael Toeller"'
Autor:
Sven Van Elshocht, Christoph Adelmann, Christophe Detavernier, Malgorzata Jurczak, Jean-Pascal Rueff, Johan Meersschaut, Anthony P Peter, Daniel Cuypers, Michael Toeller, Geert Rampelberg, James M. Ablett, Alexis Franquet, Iuliana Radu, Koen Martens, Marc Schaekers
Publikováno v:
Advanced Functional Materials. 25:679-686
Nanoscale morphology of vanadium dioxide (VO2) films can be controlled to realize smooth ultrathin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::778c24d69556e8b4bc467a8eec6e0215
https://doi.org/10.1002/adfm.201402687
https://doi.org/10.1002/adfm.201402687
Autor:
Geert Rampelberg, Christophe Detavernier, Marc Schaekers, Koen Martens, Iuliana Radu, Peter Antony Premkumar, Davy Deduytsche, Bob De Schutter, Michael Toeller
Publikováno v:
Thin Solid Films
Crystalline vanadium dioxide (VO 2 ) thin films were prepared by annealing amorphous VO 2 films which were deposited by atomic layer deposition on a SiO 2 substrate. A large influence of the oxygen partial pressure in the annealing ambient was observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5ac2f74fdad6153017a853b1ce116af
https://doi.org/10.1016/j.tsf.2013.10.039
https://doi.org/10.1016/j.tsf.2013.10.039
Autor:
M. R. Ikram, Hsing-Yi Chou, Andre Stesmans, W. Kim, Bogdan Govoreanu, Brecht Put, Stefan De Gendt, Michael Toeller, Marc Heyns, Koen Martens, Valery V. Afanasiev, Malgorzata Jurczak, Leqi Zhang, H. Hody, Antony Premkumar Peter, Thierry Conard, Iuliana Radu, Paola Favia
Publikováno v:
ECS Transactions. 58:249-258
We are assessing how VO2 and the metal to insulator transition can be used for selector applications. We report on two types of devices: diodes with VO2/TiO2 and devices with just VO2 between metal electrodes. We also examine materials issues arising
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b8e011b3406cc71fb4bdb86ed66f8c7
https://doi.org/10.1149/05807.0249ecst
https://doi.org/10.1149/05807.0249ecst
Autor:
Marc Schaekers, Michael Toeller, Thierry Conard, Alexis Franquet, Peter Antony Premkumar, Sven Van Elshocht, Olivier Richard, Alain Moussa, Hilde Tielens, Christoph Adelmann, Johan Meersschaut, Bert Brijs, Malgorzata Jurczak, Hugo Bender, Jorge A. Kittl
Publikováno v:
Chemical Vapor Deposition. 18:61-69
NiO thin films are deposited by atomic layer deposition (ALD) from the Ni(dmamb)2 (dmamb = 1-dimethylamino-2-methyl-2-butanolate) precursor using O3 as the oxidizer. The films are analyzed for wafer uniformity, structure, composition, morphology, mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c021826499e4d5ddd4df57371d40fdd
https://doi.org/10.1002/cvde.201106949
https://doi.org/10.1002/cvde.201106949
Autor:
Bert Brijs, X.P. Wang, E. Vancoille, Johannes Meersschaut, S. Van Elshocht, L. Altamime, Michael Toeller, Malgorzata Jurczak, Marc Schaekers, Dirk Wouters
Publikováno v:
ECS Transactions. 33:313-322
We report on the metal-organic chemical vapor deposition of Ti-doped NiO thin films on 300 mm wafers for the application in resistive switching memories. We have used molecular oxygen as the oxidizer and Ni(dmamb)2 and TDMAT as precursors for the sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f02acd67b01055414af69b244d0aff62
https://doi.org/10.1149/1.3481619
https://doi.org/10.1149/1.3481619
Autor:
Michael Toeller, Dirk Wouters, Jorge A. Kittl, Malgorzata Jurczak, J. Swerts, Yang Yin Chen, Guido Groeseneken, C. Adelmann, Ludovic Goux
Publikováno v:
IEEE Electron Device Letters. 33:483-485
We developed TiN\HfO2\TiN RRAM devices by using hydrogen-based plasma enhanced atomic layer deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESET voltage to the PEALD TiN). B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d32f6e0b5b65111beaf7dee31a6bad7
https://doi.org/10.1109/led.2012.2185212
https://doi.org/10.1109/led.2012.2185212
Autor:
Bogdan Govoreanu, M. R. Ikram, W. Kim, Sergiu Clima, Antony Premkumar Peter, Andre Stesmans, Michael Toeller, Koen Martens, Iuliana Radu, S. De Gendt, H. Hody, M. Jurczak, Paola Favia, V. Paraschiv, M.M. Heyns
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1acb764a89116ac9c3bd4666da17e00d
https://doi.org/10.7567/ssdm.2013.a-8-3
https://doi.org/10.7567/ssdm.2013.a-8-3
Autor:
Jorge A. Kittl, X.P. Wang, Bogdan Govoreanu, L. Altimime, Luigi Pantisano, Johannes Meersschaut, Dirk Wouters, Malgorzata Jurczak, Ludovic Goux, Michael Toeller, Y. Y. Chen, Robin Degraeve
Publikováno v:
MRS Proceedings. 1337
The unipolar resisitive switching properties of MOCVD deposited NiO in Ni/NiO/TiN stacks is reported. The switching quality is defined as function of RESET current and Roff/Ron ratio, and the importance of the Forming current and voltage on these par
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e38fbc81820809f68ac656e746d1791
https://doi.org/10.1557/opl.2011.1203
https://doi.org/10.1557/opl.2011.1203
Autor:
Iuliana P. Radu, Bogdan Govoreanu, Koen Martens, Michael Toeller, Antony P. Peter, M. R. Ikram, Le Qi Zhang, Hubert Hody, Woosik Kim, Paola Favia, Thierry Conard, Hsing Yi Chou, Brecht Put, Valery V. Afanas'ev, Andre Stesmans, Marc Heyns, Stefan De Gendt, Malgorzata Jurczak
Publikováno v:
ECS Meeting Abstracts. :2179-2179
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4607b0f2dfa443e7dbdfd2199f9fc359
https://doi.org/10.1149/ma2013-02/31/2179
https://doi.org/10.1149/ma2013-02/31/2179