Zobrazeno 1 - 10
of 56
pro vyhledávání: '"Michael Texier"'
Autor:
Matthias Rössle, Olivier Thomas, Cristian Mocuta, Raphael Rousset, Michael Texier, Stéphanie Escoubas, Catherine Dubourdieu, Eudes B. Araújo, Thomas W. Cornelius
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, 2022, ⟨10.1063/5.0077785⟩
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Journal of Applied Physics, 2022, ⟨10.1063/5.0077785⟩
Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2022-04-29T08:39:59Z (GMT). No. of bitstreams: 0 Previous issue date: 2022-02-14 The domain switching dynamics in a relaxor ferroelectric lanthanum-modified lead zirconate titanate thin film with 12 mol. % La was investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d334fb25f551f9ca02f51ed3a96e15e4
https://doi.org/10.1063/5.0077785
https://doi.org/10.1063/5.0077785
Autor:
Christophe Tromas, Michael Texier, Firas Abed El Nabi, Sandrine Brochard, Julien Godet, Amina Merabet, Laurent Pizzagalli
Publikováno v:
Materials Today: Proceedings
Materials Today: Proceedings, Elsevier, 2018, 5 (6), pp.14693-14704. ⟨10.1016/j.matpr.2018.03.059⟩
Materials Today: Proceedings, 2018, 5 (6), pp.14693-14704. ⟨10.1016/j.matpr.2018.03.059⟩
Materials Today: Proceedings, Elsevier, 2018, 5 (6), pp.14693-14704. ⟨10.1016/j.matpr.2018.03.059⟩
Materials Today: Proceedings, 2018, 5 (6), pp.14693-14704. ⟨10.1016/j.matpr.2018.03.059⟩
International audience; Molecular dynamics (MD) simulations of silicon nanowires (NW) tensile deformation were performed. They reveal a great variety of behaviors, which are rationalized thanks to a diagram highlighting the sequences of elementary me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f4082a6062eac51dc2f2700338057a8
https://doi.org/10.1016/j.matpr.2018.03.059
https://doi.org/10.1016/j.matpr.2018.03.059
Autor:
Rania Elhadi Adam, Olivier Margeat, Michael Texier, Maxime Rollo, Sylvain Bertaina, Adrien Savoyant, Omer Nur, O. Pilone, Sandrine Bernardini, Magnus Willander
Publikováno v:
Nanotechnology
Nanotechnology, 2019, ⟨10.1088/1361-6528/ab57f1⟩
Nanotechnology, Institute of Physics, 2019, ⟨10.1088/1361-6528/ab57f1⟩
Nanotechnology, 2019, ⟨10.1088/1361-6528/ab57f1⟩
Nanotechnology, Institute of Physics, 2019, ⟨10.1088/1361-6528/ab57f1⟩
The effects of white-light irradiation on similar to 15.nm diameter ZnO nanoparticles are investigated by means of electron paramagnetic resonance, near liquid-nitrogen and liquid-helium temperatures. Under dark conditions, usual core- and surface-de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a38189e4556cc9363caff86471ca989e
https://pubmed.ncbi.nlm.nih.gov/31726431
https://pubmed.ncbi.nlm.nih.gov/31726431
Autor:
Viet Huong Nguyen, Thomas W. Cornelius, Mireille Mouis, Oumayma Lourhzal, Céline Ternon, Fanny Morisot, Zeeshan Ali, Joaquim Luque, David Muñoz-Rojas, Michael Texier, Claudio Zuliani
Publikováno v:
Materials Research Express
Materials Research Express, IOP Publishing Ltd, 2019, 6 (8), pp.084004. ⟨10.1088/2053-1591/ab1f60⟩
Materials Research Express, 2019, 6 (8), pp.084004. ⟨10.1088/2053-1591/ab1f60⟩
Materials Research Express, IOP Publishing Ltd, 2019, 6 (8), pp.084004. ⟨10.1088/2053-1591/ab1f60⟩
Materials Research Express, 2019, 6 (8), pp.084004. ⟨10.1088/2053-1591/ab1f60⟩
This work reports on the transfer of randomly oriented nanowire networks based on ZnO and Al-doped zinc oxide (AZO) encapsulated ZnO nanowires onto a complementary metal oxide semiconductor (CMOS) micro electro mechanical system (MEMS) platform. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e2eb6becf44a3caa234d7e8862fbde3
https://hal.univ-grenoble-alpes.fr/hal-02162350
https://hal.univ-grenoble-alpes.fr/hal-02162350
Autor:
Laurent Pizzagalli, Julien Godet, Jacques Rabier, Anne Talneau, Sandrine Brochard, Y. M. Le Vaillant, Olivier P. Thomas, A. Merabet, Ludovic Thilly, Christophe Tromas, Michael Texier
Publikováno v:
Acta Materialia
Acta Materialia, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, Elsevier, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
Acta Materialia, Elsevier, 2018, 161, pp.54-60. ⟨10.1016/j.actamat.2018.09.025⟩
International audience; The mechanical properties of materials usually depend on the size of the considered object. Silicon, for instance, undergoes between the macroscopic and nanometer scales, a brittle-to-ductile transition at room temperature. Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::763949ebe1ef63f55bc0e99505921112
https://hal.science/hal-02318908
https://hal.science/hal-02318908
Autor:
Lee Chow, Michael Texier, Yauheni Rudzevich, J. Perrin Toinin, Alain Portavoce, K. Hoummada, Sandrine Bernardini
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.252-255. ⟨10.1016/j.nimb.2015.07.069⟩
The formation of voids on the surface of heavily implanted germanium has been known for more than 30 years. Recently there is a renewed interest in germanium due to its potential application in the complementary metal oxide semiconductor (CMOS) devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcde2942f37677ac338d357cb78df2cd
https://doi.org/10.1016/j.nimb.2015.07.069
https://doi.org/10.1016/j.nimb.2015.07.069
Publikováno v:
Defect and Diffusion Forum
Defect and Diffusion Forum, 2018, 383, pp.17-22. ⟨10.4028/www.scientific.net/DDF.383.17⟩
Defect and Diffusion Forum, Trans Tech Publications, 2018, 383, pp.17-22. ⟨10.4028/www.scientific.net/DDF.383.17⟩
Defect and Diffusion Forum, 2018, 383, pp.17-22. ⟨10.4028/www.scientific.net/DDF.383.17⟩
Defect and Diffusion Forum, Trans Tech Publications, 2018, 383, pp.17-22. ⟨10.4028/www.scientific.net/DDF.383.17⟩
Atomic redistribution of W and Fe in Si were studied using secondary ion mass spectrometry and transmission electron microscopy. W diffusion experiments performed during isothermal annealing and during Si oxidation show that W atoms should use at lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba46e0fc4837793ea7b5bae28d4b2585
https://hal.science/hal-02111609
https://hal.science/hal-02111609
Publikováno v:
Scripta Materialia
Scripta Materialia, Elsevier, 2017, 141, pp.28-31. ⟨10.1016/j.scriptamat.2017.07.011⟩
Scripta Materialia, 2017, 141, pp.28-31. ⟨10.1016/j.scriptamat.2017.07.011⟩
Scripta Materialia, Elsevier, 2017, 141, pp.28-31. ⟨10.1016/j.scriptamat.2017.07.011⟩
Scripta Materialia, 2017, 141, pp.28-31. ⟨10.1016/j.scriptamat.2017.07.011⟩
International audience; In situ X-Ray Diffraction, X-Ray Reflectivity and High Resolution Transmission Electron Microscopy were used to investigate the sequence and the texture of phase formation during the solid-state reaction of Ni thin film with G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b53b98cc18f692dd261fa6a78c7f5676
https://hal.archives-ouvertes.fr/hal-01694002
https://hal.archives-ouvertes.fr/hal-01694002
Autor:
N. Burle, Anthony De Luca, Alain Portavoce, Catherine Grosjean, Stéphane Morata, Michael Texier
Publikováno v:
physica status solidi (c)
physica status solidi (c), Wiley, 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩
physica status solidi (c), 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩
physica status solidi (c), Wiley, 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩
physica status solidi (c), 2015, 12 (8), pp.1166-1169. ⟨10.1002/pssc.201400233⟩
The behaviour of Fe atoms at the Si/SiO2 interface, as a modelisation of an involuntary Fe contamination before or during the oxidation process has been studied in Fe-implanted wafers. As-implanted and oxidized wafers were characterized by SIMS, APT,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd9137eda30503df4218a70defa8c3bb
https://doi.org/10.1002/pssc.201400233
https://doi.org/10.1002/pssc.201400233
Autor:
Marco Abbarchi, Jacques Perrin Toinin, K. Hoummada, Lee Chow, Sandrine Bernardini, M. Bertoglio, Michael Texier, Alain Portavoce
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 336-342 (2015)
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2015, 6, pp.336-342. ⟨10.3762/bjnano.6.32⟩
Beilstein Journal of Nanotechnology, 2015, 6, pp.336-342. ⟨10.3762/bjnano.6.32⟩
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Karlsruhe Institute of Technology., 2015, 6, pp.336-342. ⟨10.3762/bjnano.6.32⟩
Beilstein Journal of Nanotechnology, 2015, 6, pp.336-342. ⟨10.3762/bjnano.6.32⟩
In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0979fdf3e9b13957aa5d3626034a10a
https://doaj.org/article/faec7fcabec24ad1a132eb0bdfdd93bc
https://doaj.org/article/faec7fcabec24ad1a132eb0bdfdd93bc