Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael Stuiber"'
Autor:
Jovan Maksimovic, Jingwen Hu, Soon Hock Ng, Tomas Katkus, Gediminas Seniutinas, Tatiana Pinedo Rivera, Michael Stuiber, Yoshiaki Nishijima, Sajeev John, Saulius Juodkazis
Publikováno v:
Opto-Electronic Advances, Vol 5, Iss 9, Pp 1-12 (2022)
Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond t
Externí odkaz:
https://doaj.org/article/2bf4be0277f74036a92cff3c6d74dd5e
Autor:
Christoph Brüne, Cornelius Thienel, Michael Stuiber, Jan Böttcher, Hartmut Buhmann, Elena G. Novik, Chao-Xing Liu, Ewelina M. Hankiewicz, Laurens W. Molenkamp
Publikováno v:
Physical Review X, Vol 4, Iss 4, p 041045 (2014)
We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensional topological insulator and exclusively shows surface-state transport. Remarkably, the Landau-level dispersion and the accuracy of the Hall quantiz
Externí odkaz:
https://doaj.org/article/508639b272b745c1bc954692c00240fa
Autor:
Brett C. Johnson, Michael Stuiber, Daniel L. Creedon, Manjith Bose, Amanuel Berhane, Laurens Henry Willems van Beveren, Sergey Rubanov, Jared H. Cole, Vincent Mourik, Alexander R. Hamilton, Timothy L. Duty, Jeffrey Colin McCallum
Publikováno v:
Nano Letters. 23:17-24
The development of devices that exhibit both superconducting and semiconducting properties is an important endeavor for emerging quantum technologies. We investigate superconducting nanowires fabricated on a silicon-on-insulator (SOI) platform. Alumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94244710f19fdcf6283c3613606af32f
https://doi.org/10.1021/acs.nanolett.2c02814
https://doi.org/10.1021/acs.nanolett.2c02814
Autor:
Manjith Bose, Daniel L. Creedon, Anders Barlow, Michael Stuiber, Georgina M. Klemencic, Soumen Mandal, Oliver Williams, Grant van Riessen, Christopher I. Pakes
Nanoscale superconducting quantum interference devices (nano-SQUIDs) with Dayem bridge junctions and a physical loop size of 50 nm have been engineered in boron-doped nanocrystalline diamond films using precision Ne-ion beam milling. In an unshunted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b96a410c4c8f43059e427fdba9513dec
https://orca.cardiff.ac.uk/id/eprint/149449/3/Paper_NCD_SQUID_V9.pdf
https://orca.cardiff.ac.uk/id/eprint/149449/3/Paper_NCD_SQUID_V9.pdf
Autor:
Jovan Maksimovic, Jingwen Hu, Soon Hock Ng, Tomas Katkus, Gediminas Seniutinas, Tatiana Pinedo Rivera, Michael Stuiber, Yoshiaki Nishijima, Sajeev John, Saulius Juodkazis
Publikováno v:
Laser-based Micro- and Nanoprocessing XVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::865ec19f6e209ecfbe486559f7ba80e9
https://doi.org/10.1117/12.2609604
https://doi.org/10.1117/12.2609604
Autor:
Jurgen Beister, Brett C. Johnson, Laurens H. Willems van Beveren, Walter M. Weber, David N. Jamieson, Michael Stuiber, Andre Heinzig, Jeffrey C. McCallum
Publikováno v:
2014 Conference on Optoelectronic and Microelectronic Materials & Devices.
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can become an excellent host material for an entirely new generation of devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e479cf25b4b37485d31cb52394c3eb53
https://doi.org/10.1109/commad.2014.7038655
https://doi.org/10.1109/commad.2014.7038655