Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Michael Stoisiek"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:1575-1579
The voltage and current controlled bistability of segmented anode lateral insulated gate bipolar transistors (SA-LIGBTs) containing more than one p-anode segment has been investigated experimentally by means of monitoring the infrared recombination r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::07571c3d2c56a2fe8035ee1784cec2df
https://doi.org/10.1109/16.701491
https://doi.org/10.1109/16.701491
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
A method for the time and spatial resolved temperature measurement during active operation of large area integrated LDMOS transistors will be presented. The method uses the temperature dependence of the resistance of the transistors polysilicon gate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6172ea8a1001a077c8385f8fcc0c3e8
https://doi.org/10.1109/ispsd.2009.5158033
https://doi.org/10.1109/ispsd.2009.5158033
Autor:
Michael Stoisiek, Roland Dr Sittig
Publikováno v:
Festkörperprobleme 26 ISBN: 9783528080327
Gate-Turn-Off-thyristors are produced using a MOS-technology, so-called MOS-GTO's. The blocking voltage and forward characteristics of these devices correspond to those of conventional elements of the same axial structure. The new devices, however, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3159da80957e644c1bc8936772671e0f
https://doi.org/10.1007/bfb0107804
https://doi.org/10.1007/bfb0107804
Autor:
Michael Stoisiek, F. Furnhammer, M. Reinhold, T. Uhlig, M. Wittmaack, R. R. Ludwig, A. Bemmann, C. Ellmers, J. Liu, Y. H. Hu, E. Votintseva, Michael Gross
Publikováno v:
Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
A new smart power SOC IC process including up to 50V HV-MOS transistors, SONOS principle based non-volatile memory components and analog devices using an advanced 0.18μm platform is presented. Process architecture and device portfolio are focused on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25bc26a3cbee977dec06eadfd6490f7f
https://doi.org/10.1109/ispsd.2007.4294976
https://doi.org/10.1109/ispsd.2007.4294976
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference.
DS(on) *A = 36.2 mQmm2 at a breakdown voltage of 60 V. The integration of the devices in the CMOS base process uses five additional photo masks.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb263455e4857ec3793e2d084456e65c
https://doi.org/10.1109/essderc.2007.4430908
https://doi.org/10.1109/essderc.2007.4430908
Autor:
K.-G. Oppermann, Michael Stoisiek
Publikováno v:
8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
The design of an IGBT is always a compromise between a low on state voltage drop and low switching losses. MOS-controlled emitter shorts are well known as a means to overcome this compromise but previous solutions suffer from parasitic effects and re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fb85779074dd52d40aea322b3b86c50
https://doi.org/10.1109/ispsd.1996.509490
https://doi.org/10.1109/ispsd.1996.509490
Autor:
Y.C. Gerstenmaier, Michael Stoisiek
Publikováno v:
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's.
Simulation results on high voltage 5.5 kV IGBTs are presented for both IGBTs with triangular shaped electrical field (Type A) and nearly rectangular electrical field distribution (Type B) under blocking voltage conditions. Measurement results of a 3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec775ece3d13e862d3b444f277b0c0f9
https://doi.org/10.1109/ispsd.1997.601446
https://doi.org/10.1109/ispsd.1997.601446
Publikováno v:
Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95.
The paper reports a first attempt to a dielectric isolated 600 V IC-process. With commercially available direct-wafer-bonded Si/SiO/sub 2//Si-wafers we processed the isolated islands with the basic high voltage devices in a standard sub-/spl mu/ fabr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb993828460bf4ccf27571c4f04cd093
https://doi.org/10.1109/ispsd.1995.515058
https://doi.org/10.1109/ispsd.1995.515058
Publikováno v:
Simulation of Semiconductor Processes and Devices 1998 ISBN: 9783709174159
A generalized model for bandgap narrowing effects is developed. It takes into account the individual dependency of conduction- and valence band edge on doping level. Our model includes the common formulation as a special case of symmetric decrease of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b841f7cd593784bc545ef8422c3f4394
https://doi.org/10.1007/978-3-7091-6827-1_30
https://doi.org/10.1007/978-3-7091-6827-1_30
Autor:
Michael Stoisiek, Dietmar Theis
Publikováno v:
IEEE Transactions on Power Electronics. :362-366
MOS-GTO's (GTO thyristors which are turned off by the action of a MOS-gate) represent a new generation of controllable thyristors offering considerable advantages in turn-off behavior as compared to conventional GTO's. However, MOS-GTO's generally re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f3639e5950aefc65df1bad8371854e
https://doi.org/10.1109/tpel.1987.4307872
https://doi.org/10.1109/tpel.1987.4307872