Zobrazeno 1 - 10
of 200
pro vyhledávání: '"Michael Stavola"'
Autor:
Andrew Venzie, Michael Stavola, W. Beall Fowler, Evan R. Glaser, Marko J. Tadjer, Jason I. Forbus, Mary Ellen Zvanut, Stephen J. Pearton
Publikováno v:
APL Materials, Vol 12, Iss 7, Pp 071108-071108-5 (2024)
Hydrogen in β-Ga2O3 passivates shallow impurities and deep-level defects and can have a strong effect on conductivity. More than a dozen O–D vibrational lines have been reported for β-Ga2O3 treated with the heavy isotope of hydrogen, deuterium. T
Externí odkaz:
https://doaj.org/article/e3a632e433be42ae9c24dd0bfab45a6a
Autor:
Andrew Venzie, Amanda Portoff, Michael Stavola, W. Beall Fowler, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, Stephen J. Pearton
Publikováno v:
Applied Physics Letters. 120
α-Ga2O3 has the corundum structure analogous to that of α-Al2O3. The bandgap energy of α-Ga2O3 is 5.3 eV and is greater than that of β-Ga2O3, making the α-phase attractive for devices that benefit from its wider bandgap. The O–H and O–D cent
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3103-Q3110
β-Ga2O3 is a transparent conducting oxide with a wide bandgap (4.9 eV) whose properties are generating widespread interest. It has been found that hydrogen can play a key role in the conductivity of Ga2O3 by passivating deep defects and acting as a
Recent suggestions that hydrogen incorporation at the Ga(1) vacancy in β-Ga2O3 may have an impact on its electronic properties have led us to extend our earlier work on these defects. While our previous work provides strong evidence for one, two, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::314e9133b2e1a3a4abcc0ddc63c1bc53
http://hdl.handle.net/10852/80486
http://hdl.handle.net/10852/80486
Autor:
Fan Ren, W. Beall Fowler, Michael Stavola, Andrew Venzie, Stephen J. Pearton, Amanda Portoff, Chaker Fares
Publikováno v:
Applied Physics Letters. 119:062109
Si is an n-type dopant in Ga2O3 that can be intentionally or unintentionally introduced. The results of Secondary Ion Mass Spectrometry, Hall effect, and infrared absorption experiments show that the hydrogen plasma exposure of Si-doped Ga2O3 leads t
Hydrogen has a strong influence on the electrical properties of transparent conducting oxides where it can give rise to shallow donors and can passivate deep compensating defects. This chapter surveys the properties of the hydrogen impurity in Ga2O3.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd2aa05194245fca78ea4a980408792f
https://doi.org/10.1016/b978-0-12-814521-0.00009-9
https://doi.org/10.1016/b978-0-12-814521-0.00009-9
Autor:
Kwang Hyeon Baik, Kristen Bevlin, Patrick H. Carey, Kalyan K. Das, Roberto Fornari, W. Beall Fowler, Dwarakanath Geerpuram, Krishnendu Ghosh, B.P. Gila, N.C. Giles, L.E. Halliburton, D. Hays, Hisao Hidaka, Ching-Hwa Ho, Soohwan Jang, Lai Jiang, Sunwoo Jung, Rohit Khanna, Jihyun Kim, Janghyuk Kim, Suhyun Kim, Sriram Krishnamoorthy, Mukesh Kumar, Sudheer Kumar, Vikram Kumar, Luke A.M. Lyle, M.A. Mastro, David J. Meyer, Rangarajan Muralidharan, Digbijoy N. Nath, Neeraj Nepal, Sooyeoun Oh, Stephen Pearton, Lisa M. Porter, Anamika Singh Pratiyush, Ying Qin, Siddharth Rajan, C.V. Ramana, F. Ren, D. Scott Katzer, R. Singh, Uttam Singisetti, Michael Stavola, Marko J. Tadjer, Li-Chia Tien, Tohru Tsukamoto, Holger von Wenckstern, Philip Weiser, Jiancheng Yang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47f0d3bc2b35f28f48dd9be50c36965f
https://doi.org/10.1016/b978-0-12-814521-0.09991-7
https://doi.org/10.1016/b978-0-12-814521-0.09991-7
Publikováno v:
Journal of Applied Physics. 127:055702
β-Ga2O3 is a promising ultrawide bandgap semiconductor for high power and extreme environment applications. The dominant O—H center in Ga2O3 has been assigned to a Ga(1) vacancy–2H (VGa(1)-2H) complex. An analysis of the polarization dependence
Autor:
Gwangseok Yang, Fan Ren, Jihyun Kim, Jiancheng Yang, Michael Stavola, Stephen J. Pearton, Akito Kuramata
Publikováno v:
Gallium Nitride Materials and Devices XIII.
Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (~4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown i
Publikováno v:
Solid State Phenomena. :209-212
Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2*defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The res