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pro vyhledávání: '"Michael Shevelev"'
Autor:
Kenneth A. Jones, Vlad Sklyar, Michael Shevelev, Michael A. Derenge, Milena B. Graziano, Andrew C. Lang, Woongje Sung, Sean Tozier, Kasey Hogan, Mitra L. Taheri, F. Shadi Shahedipour-Sandvik
Publikováno v:
Gallium Nitride Materials and Devices XIV.
The advancement in potential selective placement of p-GaN regions places the gallium nitride (GaN) material system on the forefront of next generation power semiconductor devices. The ion implantation technique is commonly used in fabrication of semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9780dafd00c2f667030f9ae995502a0a
https://doi.org/10.1117/12.2506824
https://doi.org/10.1117/12.2506824
