Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael S. Van Heukelom"'
Autor:
Sapan Agarwal, Diana Garland, John Niroula, Robin B. Jacobs-Gedrim, Alex Hsia, Michael S. Van Heukelom, Elliot Fuller, Bruce Draper, Matthew J. Marinella
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 52-57 (2019)
Floating-gate silicon-oxygen-nitrogen-oxygen-silicon (SONOS) transistors can be used to train neural networks to ideal accuracies that match those of floating-point digital weights on the MNIST handwritten digit data set when using multiple devices t
Externí odkaz:
https://doaj.org/article/f9789c4e832c44fb8d70061ff4ef4e3c
Autor:
Diana Garland, Michael S. Van Heukelom, John Niroula, Alex Hsia, Elliot J. Fuller, Sapan Agarwal, Robin B. Jacobs-Gedrim, Matthew J. Marinella, Bruce L. Draper
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 5, Iss 1, Pp 52-57 (2019)
Floating-gate silicon-oxygen-nitrogen-oxygen-silicon (SONOS) transistors can be used to train neural networks to ideal accuracies that match those of floating-point digital weights on the MNIST handwritten digit data set when using multiple devices t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6532c9f15247b1419480da95975e5d1
https://ieeexplore.ieee.org/document/8663600/
https://ieeexplore.ieee.org/document/8663600/
Autor:
Andrew J. Pope, Chad A. Stephenson, Albert Colon, Albert G. Baca, Michael S. Van Heukelom, Brianna Klein, Erica A. Douglas, Anna Tauke-Pedretti
Publikováno v:
Solid-State Electronics. 151:47-51
Al0.26Ga0.74N/GaN on SiC lateral Schottky diodes were fabricated with variable anode-to-cathode spacing and were analyzed for blocking and on-state device performance. On-chip normally-on High Electron Mobility Transistor (HEMT) structures were also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6c7e136ef002493ac6035eebde821ab
https://doi.org/10.1016/j.sse.2018.10.009
https://doi.org/10.1016/j.sse.2018.10.009
Autor:
Anthony Rice, Victor Patel, Jennifer Pipkin, Brianna Klein, Samuel Graham, Lisa Caravello, Christopher D. Nordquist, Andrew M. Armstrong, Andrew A. Allerman, Nicholas J. Hines, Rebecca DeBerry, Mary Rosprim, Vincent M. Abate, Robert Kaplar, Michael S. Van Heukelom
Publikováno v:
ECS Meeting Abstracts. :955-955
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f26e280b3ea188845a490bed9e2d1e2
https://doi.org/10.1149/ma2021-0232955mtgabs
https://doi.org/10.1149/ma2021-0232955mtgabs
Autor:
Matthew J. Marinella, Michael S. Van Heukelom, Elliot J. Fuller, Sapan Agarwal, Yiyang Li, Robin B. Jacobs-Gedrim, A. Alec Talin, David Russell Hughart, Christopher H. Bennett, Alex Hsia
Publikováno v:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
Analog crossbars have the potential to reduce the energy and latency required to train a neural network by three orders of magnitude when compared to an optimized digital ASIC. The crossbar simulator, CrossSim, can be used to model device nonidealiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea18ff84f27330bc2caa604f5529ab84
https://doi.org/10.1109/vlsi-tsa.2019.8804680
https://doi.org/10.1109/vlsi-tsa.2019.8804680
Autor:
Gregory W. Pickrell, Andrew M. Armstrong, Andrew A. Allerman, Mary H. Crawford, Daniel Feezell, Morteza Monavarian, Isaac Stricklin, Fred J Zutavern, Alan Mar, Emily Hirsch, Jack D. Flicker, Jarod J Delhotal, Joseph Dana Teague, Jane M. Lehr, Karen C. Cross, Caleb E. Glaser, Michael S Van Heukelom, Richard J Gallegos, Verle H Bigman, Robert J. Kaplar
Publikováno v:
ECS Meeting Abstracts. :1156-1156
Semiconductor materials with wide bandgaps, including GaN and AlxGa1-xN, offer many performance advantages for power electronic devices compared to conventional Si-based devices. These include larger critical electric fields enabling higher reverse b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3af2683b38fe627fadff4e5bceaf825d
https://doi.org/10.1149/ma2018-02/34/1156
https://doi.org/10.1149/ma2018-02/34/1156