Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Michael S. Seifner"'
Autor:
Tianyi Hu, Michael S. Seifner, Markus Snellman, Daniel Jacobsson, Mehran Sedrpooshan, Pau Ternero, Maria E. Messing, Kimberly A. Dick
Publikováno v:
Small Structures, Vol 4, Iss 9, Pp n/a-n/a (2023)
In the last decades, the metal‐assisted growth approach of semiconductor nanowires (NWs) has shown its potential in controlling crystal properties, such as crystal structure, composition, and morphology. Recently, literature reports have shown succ
Externí odkaz:
https://doaj.org/article/dc52ea8c28d2494296009972f4bee9bf
Autor:
Raphael Behrle, Vanessa Krause, Michael S. Seifner, Benedikt Köstler, Kimberly A. Dick, Matthias Wagner, Masiar Sistani, Sven Barth
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 627 (2023)
Si1−xGex nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associ
Externí odkaz:
https://doaj.org/article/44311cb7d6dd4c12954c2868d9f41926
Autor:
Guillem Domènech-Gil, Lukas Hrachowina, Antonio Pardo, Michael S. Seifner, Isabel Gràcia, Carles Cané, Sven Barth, Albert Romano-Rodríguez
Publikováno v:
Proceedings, Vol 2, Iss 13, p 957 (2019)
A new method for the site-selective synthesis of nanowires has been developed to enable the material growth with specific morphology and different compositions on one single chip. Based on a modification of the chemical vapor deposition method, the g
Externí odkaz:
https://doaj.org/article/a3e1c2d0087c49e98cd9b1c5bbece21e
Autor:
Michael S. Seifner, Tianyi Hu, Markus Snellman, Daniel Jacobsson, Knut Deppert, Maria E. Messing, Kimberly A. Dick
Publikováno v:
ACS Nano. 17:7674-7684
Publikováno v:
Chemistry of Materials. 32:2703-2741
In the past decades, group IV nanowires and nanoparticles have been the subject of extensive research. Beside tremendous progress in morphological control and integration in advanced device archite...
Autor:
Michael S. Seifner, Sven Barth, Andreas Steiger-Thirsfeld, Alain Dijkstra, Alois Lugstein, Jos E. M. Haverkort, Masiar Sistani, Johannes Bernardi
Publikováno v:
ACS Nano
ACS Nano, 13(7), 8047-8054. American Chemical Society
ACS Nano, 13(7), 8047-8054. American Chemical Society
Highly oriented Ge 0.81Sn 0.19 nanowires have been synthesized by a low-temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable th
Autor:
Alois Lugstein, Sven Barth, Maximilian G. Bartmann, Ivan Zivadinovic, Masiar Sistani, Michael S. Seifner
Publikováno v:
Crystal Growth & Design. 19:2531-2536
Varying the growth conditions of gallium-seeded germanium nanostructures leads to significant variations in morphology, and particularly of the electronic properties inducing a transition from the ...
Autor:
Masiar Sistani, Michael S. Seifner, Alois Lugstein, Raphael Böckle, Sven Barth, Philipp Staudinger
Publikováno v:
Nanotechnology. 31(44)
Despite being known of for decades, the actual realization of memory devices based on the memristive effect is progressing slowly, due to processing requirements and the need for exotic materials which are not compatible with today’s complementary-
Autor:
Masiar Sistani, Michael S. Seifner, Patrik Pertl, Christopher Herzig, Sven Barth, Alois Lugstein, Andreas Limbeck
Publikováno v:
Monatshefte Fur Chemie
The Ga-assisted formation of Ge nanorods and nanowires in solution has been demonstrated and a catalytic activity of the Ga seeds was observed. The synthesis of anisotropic single-crystalline Ge nanostructures was achieved at temperatures as low as 1
Autor:
Guillem Domènech-Gil, Michael S. Seifner, Albert Romano-Rodriguez, Carles Cané, Sven Barth, Lukas Hrachowina, Antonio Pardo, Isabel Gràcia
Publikováno v:
Recercat. Dipósit de la Recerca de Catalunya
instname
Dipòsit Digital de la UB
Universidad de Barcelona
instname
Dipòsit Digital de la UB
Universidad de Barcelona
A new method for the site-selective synthesis of nanowires has been developed to enable material growth with defined morphology and, at the same time, different composition on the same chip surface. The chemical vapor deposition approach for the grow