Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Michael S. Gaither"'
Autor:
Daniel Moos, Scott M. Johnson, Michael S. Gaither, Leonardo Cruz, Laura Chiaramonte, Ghazal Izadi
Publikováno v:
Day 2 Wed, January 25, 2017.
Weak bedding planes create a unique mechanism for hydraulic fracture height containment, providing one possible explanation for unusual patterns of height growth in shale formations. This paper describes an investigation into how bedding planes modif
Publikováno v:
Journal of Microelectromechanical Systems. 22:589-602
The etching processes used to produce microelectromechanical systems (MEMS) leave residual surface features that typically limit device strength and, consequently, device lifetime and reliability. In order to optimize MEMS device reliability, it is t
Autor:
Frank W. DelRio, Richard S. Gates, Robert F. Cook, William A. Osborn, Rebecca Kirkpatrick, Michael S. Gaither
Publikováno v:
MRS Communications. 3:113-117
A new theta geometry was developed for microscale bending strength measurements. This new “gap” theta specimen was a modification of the arch theta specimen that enabled microscale tensile testing. The gap theta specimen was demonstrated here on
Publikováno v:
Journal of Materials Research. 26:2575-2589
Single-crystal silicon test specimens, fabricated by lithography and deep reactive ion etching (DRIE), were used to measure microscale deformation and fracture properties. The mechanical properties of two specimen geometries, both in the form of a Gr
Publikováno v:
Scripta Materialia. 63:422-425
A new test specimen was developed for micro-scale tensile strength measurements, allowing direct assessment of surface effects on strength. Specimens were formed by deep reactive ion etching, tested with instrumented indentation, and test results int
Publikováno v:
2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS).
Micro- and nano-electromechanical systems are typically formed via lithographic and etching processes that leave residual surface features, stresses, and chemistry that ultimately control component strength and thus device and system reliability. Her
Publikováno v:
Journal of Applied Physics. 114:113506
A methodology to decouple irregular small-scale roughness and regular long-range features on deep reactive ion etched (DRIE) silicon surfaces is presented. Height-height correlations of three different DRIE silicon surfaces are evaluated via atomic f