Zobrazeno 1 - 10
of 592
pro vyhledávání: '"Michael S. Adler"'
Autor:
David A. Adler, Michael S. Adler
Harry Houdini astounded audiences around the globe with his death-defying acts and illusions. With his wife, Bess, often by his side, he freed himself from ropes, handcuffs, straitjackets, and prison cells. Once he even made a ten-thousand-pound elep
Autor:
David A. Adler, Michael S. Adler
Daniel Boone, an adventurer since birth, explores a wild and free North America in this picture book biography.In the early years of North American colonization, a boy named Daniel Boone was born to a land of deep forests, exciting wildlife, and unex
Autor:
T.P. Chow, M.F. Chang, Michael S. Adler, H. Yilmaz, Bantval Jayant Baliga, P.V. Gray, G.C. Pifer
Publikováno v:
IEEE Transactions on Electron Devices. 39:1317-1321
An n-channel vertical insulated-gate bipolar transistor (IGBT) process which implements a self-aligned p/sup +/ short inside the DMOS diffusion windows is proposed and demonstrated experimentally. The salient feature of the new process is the placeme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51617c08dabb2dd564a390410f971265
https://doi.org/10.1109/16.137310
https://doi.org/10.1109/16.137310
Autor:
Deva Narayan Pattanayak, William Andrew Hennessy, Bantval Jayant Baliga, Michael S. Adler, C.E. Logan, T.P. Chow
Publikováno v:
IEEE Transactions on Electron Devices. 38:310-315
The static and dynamic interaction between monolithically integrated n- and p-channel, high-voltage lateral insulated-gate bipolar transistors (LGBTs) are studied. In the chosen system partition, three common-source, n-channel LIBGTs are monolithical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8319a938de8ceb481b74c3b32eab7192
https://doi.org/10.1109/16.69911
https://doi.org/10.1109/16.69911
Autor:
David A. Adler, Michael S. Adler
¡Sí se puede! Learn all about the Mexican American activist who worked tirelessly to promote better conditions for workers.This clear and concise biography with folksy illustrations details the amazing life of American labor leader and civil rights
Publikováno v:
Proceedings of the 2nd International Symposium on Power Semiconductor Devices and Ics. ISPSD '90..
The latching characteristics of 500V, n-channel HSINFET's are measured and compared to lateral IGBT's with and without collector shorts. In particular, the effect of substrate resistivity, Schottky region length in the collector and emitter shorts on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee2d12933e48df8d605721eee782678f
https://doi.org/10.1109/ispsd.1990.991069
https://doi.org/10.1109/ispsd.1990.991069
Autor:
Deva Narayan Pattanayak, Eric Joseph Wildi, R.S. Ahle, R.S. Scott, J.E. Kohl, Michael S. Adler
Publikováno v:
Technical Digest., International Electron Devices Meeting.
High-voltage complementary pullup and pulldown devices have been fabricated in a high-voltage integrated circuit process that is based on thin epitaxial layers ( >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1feeda6b4dd2ff24bbb5c1f9130c09
https://doi.org/10.1109/iedm.1988.32932
https://doi.org/10.1109/iedm.1988.32932
Autor:
T.P. Chow, Bantval Jayant Baliga, Michael S. Adler, Deva Narayan Pattanayak, A. Mogro-Campero
Publikováno v:
Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.
The effect of proton implantation on the performance of n- and p-channel, 500-V lateral insulated gate bipolar transistors (LIGBTs) are studied. It is shown that proton implantation results in a better forward drop vs. turn-off time than conventional
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b26b6c50e5d76ea4d471d266aaac2b70
https://doi.org/10.1109/bipol.1992.274072
https://doi.org/10.1109/bipol.1992.274072
Autor:
Michael S. Adler
Publikováno v:
[Proceedings] NTC-92: National Telesystems Conference.
It is noted that the General Electric high density interconnect (GE-HDI) is an excellent solution to the digital multichip packaging problem, and it offers solutions to other difficult system interconnect problems in analog power, microwave, display,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa55ba3dabe8c581e60ca817c2bd47b
https://doi.org/10.1109/ntc.1992.267906
https://doi.org/10.1109/ntc.1992.267906
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
A novel reverse-channel lateral IGBT has been studied with numerical simulations and demonstrated experimentally for the first time. It exhibits a negative differential resistance (NDR) region, which is dependent on the gate voltage and has large pea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ee8fd26c9b99c56af4359ce3e6f5f6
https://doi.org/10.1109/ispsd.1994.583647
https://doi.org/10.1109/ispsd.1994.583647