Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Michael Rasp"'
Publikováno v:
PLoS ONE, Vol 19, Iss 12, p e0315317 (2024)
Hamstring strain injuries are a prevalent burden in soccer. Low strength, muscle fatigue, and inter-limb differences in hamstring strength are associated with hamstring injury risk. Previous research shows increased hamstring injury incidence in socc
Externí odkaz:
https://doaj.org/article/5f0cd5418d7e4c12ab7328f3483bfe71
Publikováno v:
PLoS ONE, Vol 19, Iss 10, p e0312843 (2024)
Hamstring injuries are associated with decreased hamstring strength. Matinlauri et al.'s 90:20 Isometric Posterior Chain Test (90:20 IPCT) efficiently assesses hamstring strength, but has not been validated so far. Furthermore, their rather unprecise
Externí odkaz:
https://doaj.org/article/0eb94d2824af4f3f962e27db02a773c0
Publikováno v:
Materials Science Forum. :11-14
We carried out investigations to elucidate the reasons for polytype changes in 4H. The aim was to sustain polytype stability throughout the entire process. The investigations were accompanied by studies on the formation of basal plane dislocations an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d920e141e200dc19898074b3977672c
https://doi.org/10.4028/www.scientific.net/msf.600-603.11
https://doi.org/10.4028/www.scientific.net/msf.600-603.11
Publikováno v:
Journal of Crystal Growth. 310:966-970
In this work, we present recent results on development and production of n-type 4 H bulk material. From previous studies it is evident that inclusions of foreign polytypes can act as origin of severe structural imperfections [N. Schulze, D.L. Barret,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f4c2b64d19f2ce3d00ed6ddc93cf1c
https://doi.org/10.1016/j.jcrysgro.2007.11.185
https://doi.org/10.1016/j.jcrysgro.2007.11.185
Publikováno v:
Materials Science Forum. :3-8
For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Since then significant improvements have been achieved and mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95147a7325daf3a528f8317fbe5ba7eb
https://doi.org/10.4028/www.scientific.net/msf.556-557.3
https://doi.org/10.4028/www.scientific.net/msf.556-557.3
Publikováno v:
Superlattices and Microstructures. 40:320-327
For several years the major focus of material issues in SiC substrates was laid on the reduction of macroscopic defects like polytype inclusions, low angle grain boundaries and micropipes. Although significant improvements have been achieved, there a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f17af633db7dcf583bd1035a850200bb
https://doi.org/10.1016/j.spmi.2006.06.007
https://doi.org/10.1016/j.spmi.2006.06.007
Autor:
Erwin Schmitt, Matthias Bickermann, Michael Rasp, Horst Sadowski, Sergey A. Reshanov, Thomas Straubinger
Publikováno v:
Materials Science Forum. :55-58
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b75236460bef87faf06df05d0bf00b47
https://doi.org/10.4028/www.scientific.net/msf.433-436.55
https://doi.org/10.4028/www.scientific.net/msf.433-436.55
Autor:
Matthias Bickermann, Thomas Straubinger, Michael Rasp, Peter J. Wellmann, Roland Weingärtner, Albrecht Winnacker
Publikováno v:
Materials Science Forum. :131-134
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0964c14a3e50ec5211b5cb5db4ca9c42
https://doi.org/10.4028/www.scientific.net/msf.389-393.131
https://doi.org/10.4028/www.scientific.net/msf.389-393.131
Publikováno v:
Zeitschrift für Naturforschung B. 57:215-225
2-Thiobarbituric acids 1 can be dimerized anodically in acceptable yields if the special ultrasonic electrolysis cell described here is used. In some cases two isomeric dimers 2 and 4 were isolated. 2 is of the same type as the corresponding barbitur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec39421fda1aca898c0fccb18f8b24a7
https://doi.org/10.1515/znb-2002-0213
https://doi.org/10.1515/znb-2002-0213
Autor:
Roland Weingärtner, S. Bushevoy, Michael Rasp, Dieter Hofmann, Albrecht Winnacker, Matthias Bickermann, Thomas Straubinger, Peter J. Wellmann
Publikováno v:
Materials Science and Engineering: B. 80:357-361
An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is discussed. The absorption bands of free charge carriers at 460 nm in n-type 4H-SiC are used to determine its doping conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93d638970ecda2b88abcc5e4decc0949
https://doi.org/10.1016/s0921-5107(00)00599-7
https://doi.org/10.1016/s0921-5107(00)00599-7