Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Michael Randle"'
Autor:
Jong E. Han, Camille Aron, Xi Chen, Ishiaka Mansaray, Jae-Ho Han, Ki-Seok Kim, Michael Randle, Jonathan P. Bird
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field far-from-equilibrium necessitates a reevaluation of current microscopic understanding. Here we sh
Externí odkaz:
https://doaj.org/article/539ac5c5546f45baad9f3d56bc63314e
Autor:
Jubin Nathawat, Miao Zhao, Chun-Pui Kwan, Shenchu Yin, Nargess Arabchigavkani, Michael Randle, Harihara Ramamoorthy, Guanchen He, Ratchanok Somphonsane, Naoki Matsumoto, Kohei Sakanashi, Michio Kida, Nobuyuki Aoki, Zhi Jin, Yunseob Kim, Gil-Ho Kim, Kenji Watanabe, Takashi Taniguchi, Jonathan P. Bird
Publikováno v:
ACS Omega, Vol 4, Iss 2, Pp 4082-4090 (2019)
Externí odkaz:
https://doaj.org/article/0f9f3da6bd324b7eac40a24b0369ad72
Publikováno v:
Frontiers in Psychology, Vol 10 (2019)
Experimentally inducing low subjective socioeconomic status (SSES) increases food consumption in standardized eating opportunities. Separately, food insecurity (FI) has also been shown to be associated with increased food consumption when a free eati
Externí odkaz:
https://doaj.org/article/8e17a43384194c9c8a6c1275aa42d97a
Autor:
Jong E. Han, Camille Aron, Xi Chen, Ishiaka Mansaray, Jae-Ho Han, Ki-Seok Kim, Michael Randle, Jonathan P. Bird
The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field far-from-equilibrium necessitates a reevaluation of current microscopic understanding. Here we show that a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7e1468fc7f9297e026d1417689e0d9b
http://arxiv.org/abs/2205.04396
http://arxiv.org/abs/2205.04396
Autor:
B. Barut, J.G. Gluschke, Jonathan P. Bird, Michael Randle, N. Arabchigavkani, J. Nathawat, R. Dixit, Keke He, Adam P. Micolich, C.-P. Kwan, S. Yin
Publikováno v:
ACS Applied Electronic Materials. 1:2260-2267
We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component. The HOMO–LUMO gap of parylene is large ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec20d2e8066019c563495c5ba1f69fe2
https://doi.org/10.1021/acsaelm.9b00467
https://doi.org/10.1021/acsaelm.9b00467
Autor:
H. Ramamoorthy, Jonathan P. Bird, G. He, Michio Kida, Gil-Ho Kim, C.-P. Kwan, Kohei Sakanashi, Naoki Matsumoto, R. Somphonsane, Miao Zhao, Yunseob Kim, Nobuyuki Aoki, Takashi Taniguchi, S. Yin, Zhi Jin, Kenji Watanabe, J. Nathawat, N. Arabchigavkani, Michael Randle
Publikováno v:
ACS Omega, Vol 4, Iss 2, Pp 4082-4090 (2019)
ACS Omega
ACS Omega
We use transient electrical measurements to investigate the details of self-heating and charge trapping in graphene transistors encapsulated in hexagonal boron nitride (h-BN) and operated under strongly nonequilibrium conditions. Relative to more sta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50d0cdf883c97935b8c990cb9bf7f70
https://doaj.org/article/0f9f3da6bd324b7eac40a24b0369ad72
https://doaj.org/article/0f9f3da6bd324b7eac40a24b0369ad72
Autor:
R. Dixit, Maria C. Asensio, Jonathan P. Bird, Takeshi Komesu, B. Barut, C.-P. Kwan, N. Arabchigavkani, Michael Randle, Alexey Lipatov, Peter A. Dowben, Avinash Kumar, S. Yin, José Avila, Uttam Singisetti, Keke He, Alexander Sinitskii, J. Nathawat
Publikováno v:
ACS Nano. 13:803-811
We explore the electrical characteristics of TiS3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88646017ec01377b29117837acd836ae
https://doi.org/10.1021/acsnano.8b08260
https://doi.org/10.1021/acsnano.8b08260
Autor:
Keke He, Michael Randle, Tetsuya D. Mishima, C.-P. Kwan, Ian R. Sellers, David K. Ferry, N. Arabchigavkani, B. Barut, J. Nathawat, M. B. Santos, S. Yin, Jonathan P. Bird, R. Dixit
Publikováno v:
Physical Review Materials. 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eca0a938470e68a40ed6f96db41c9b4
https://doi.org/10.1103/physrevmaterials.4.085404
https://doi.org/10.1103/physrevmaterials.4.085404
Autor:
B. Barut, Nobuyuki Aoki, Peter A. Dowben, H. Ramamoorthy, G. He, N. Arabchigavkani, R. Somphonsane, Jonathan P. Bird, Michael Randle, R. Dixit, J. Nathawat, S. Yin, Kohei Sakanashi, Wai-Ning Mei, Keke He, Jonas Fransson, Kechun Zhang, Liu-Jun Wang
Publikováno v:
Physical review letters. 126(8)
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this unive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::749137edb4d47d371c14a2c3bdddc3e0
https://pubmed.ncbi.nlm.nih.gov/33709762
https://pubmed.ncbi.nlm.nih.gov/33709762
Autor:
R. Dixit, Eric Pop, B. Barut, Christopher D. English, J. Nathawat, Michael Randle, Keke He, N. Arabchigavkani, Kirby K. H. Smithe, S. Yin, Jonathan P. Bird
Publikováno v:
Physical Review Materials. 4
Drift velocity saturation (at some characteristic value, ${v}_{d}^{\mathrm{sat}}$) is a critical process that limits the ultimate current-carrying capacity of semiconductors at high electric fields $(\ensuremath{\sim}{10}^{4}\phantom{\rule{0.16em}{0e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::107b8a4adee160e2e6f215bbd243d452
https://doi.org/10.1103/physrevmaterials.4.014002
https://doi.org/10.1103/physrevmaterials.4.014002