Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Michael Q. Hovish"'
Autor:
Nicholas Rolston, Michael Q. Hovish, Reinhold H. Dauskardt, Karsten Brüning, Florian Hilt, Christopher J. Tassone
Publikováno v:
Journal of Materials Chemistry A. 8:169-176
Rapid Spray Plasma Processing (RSPP) is a high throughput, scalable, and open-air route toward manufacturing perovskite solar modules. The plasma exposure is dosed such that the perovskite precursor solution is cured in milliseconds using a combinati
Autor:
Christopher J. Tassone, Nicholas Rolston, Karsten Brüning, Florian Hilt, Michael Q. Hovish, Reinhold H. Dauskardt
Publikováno v:
Energy & Environmental Science. 11:2102-2113
We demonstrate a scalable atmospheric plasma route to rapidly form efficient and mechanically robust photoactive metal halide perovskite films in open air at linear deposition rates exceeding 4 cm s−1. Our plasma process uses clean dry air to produ
Autor:
Nicholas Rolston, Michael Q. Hovish, Justin Chen, William J. Scheideler, Reinhold H. Dauskardt, Austin C. Flick, Oliver Zhao
Publikováno v:
ICMAT 2019.
Autor:
Karsten Brüning, Reinhold H. Dauskardt, Adam D. Printz, Michael Q. Hovish, Christopher J. Tassone, Florian Hilt, Nicholas Rolston
Publikováno v:
Journal of Materials Chemistry A. 5:22975-22983
We report on submicron organosilicate barrier films produced rapidly in air by a scalable spray plasma process that improves both the stability and efficiency of perovskite solar cells. The plasma is at sufficiently low temperature to prevent damage
Publikováno v:
Advanced Functional Materials. 29:1806421
Publikováno v:
Journal of Physics D: Applied Physics. 49:395302
Thin films of tantalum oxynitride (TaO x N y ) and titanium oxynitride (TiO x N y ) are deposited using atmospheric plasma deposition and a suite of optical properties are reported. Tantalum and titanium ethoxide are introduced into the afterglow of
Autor:
Richard J. Matyi, Benjamin D. Briggs, Nathaniel C. Cady, Jihan O. Capulong, S.M. Bishop, Michael Q. Hovish
Publikováno v:
2012 IEEE International Integrated Reliability Workshop Final Report.
This paper compares the resistive switching properties of crystalline and amorphous HfO x thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O 2 partial pressures. The crystallinity
Autor:
Michael Q Hovish, Reinhold H Dauskardt
Publikováno v:
Journal of Physics D: Applied Physics; 10/5/2016, Vol. 49 Issue 39, p1-1, 1p