Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Michael P. O'Day"'
Autor:
Mahjabin Maksud, Hannes Greve, Daniel Pantuso, Chetan Prasad, K. W. Park, Benjamin J. Orr, Peng Bai, I-chen Ho, Steven R. Novak, Zhizheng Zhang, D. Ingerly, Michael P. O'Day, Cheyun Lin, Enamul Kabir, Emre Armagan, Sunny Chugh, Patrick N. Stover, Lance C. Hibbeler, A. Schmitz, Hsinwei Wu
Publikováno v:
IRPS
This work presents silicon reliability characterization of Intel’s Foveros three-dimensional (3D) logic-on-logic stacking technology implemented on the 22FFL process node. Simulations and data demonstrate mechanical strain safe zones around Through
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689880d48e87d8e5dfb8a1916e08af40
https://doi.org/10.1109/irps45951.2020.9129277
https://doi.org/10.1109/irps45951.2020.9129277
Autor:
Terri Wilson, Ramanarayanan Panchapakesan, Ankur Aggarwal, Guotao Wang, R. Grover, Sudarshan Rangaraj, Michael P. O'Day, J. Hicks
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
Inter-layer dielectric (ILD) materials used in silicon chip backend layers tend to be mechanically fragile, and the industry trend is towards ILD materials with even lower dielectric constants and fracture toughness. Flip-chip packaging with lead-fre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e432ecaddf3d7df02453597e53fd71
https://doi.org/10.1109/ectc.2013.6575644
https://doi.org/10.1109/ectc.2013.6575644