Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Michael P. Nault"'
Autor:
Cedric Monget, Patrick Schiavone, Olivier Joubert, Jean-Marc Temerson, Michael P. Nault, Olivier Toublan, Alain Prola, R. L. Inglebert, David Fuard, Timothy W. Weidman, Nikolaos Bekiaris
Publikováno v:
SPIE Proceedings.
New photoresists and processes are required for sub 0.15 micrometers design rules and currently an important effort is on- going for single layer resists optimization at 193 nm. Top surface imaging can be an interesting alternative approach. An all d
Autor:
Carol Y. Lee, Ling Liao, Michael P. Nault, David Mui, Tony Tryba, Dian Sugiarto, Timothy W. Weidman
Publikováno v:
SPIE Proceedings.
Plasma polymerized organosilane resist films have been shown to exhibit high sensitivity to DUV radiation 15 We havepreviously demonstrated a 193nm CVD photoresist process in which plasma polymerized methylsilane (PPMS) is patternedvia photo-oxidatio
Autor:
Timothy W. Weidman, Carol Y. Lee, Siddhartha Das, Zoe A. Osborne, Dian Sugiarto, John W. Yang, Michael P. Nault, David Mui
Publikováno v:
SPIE Proceedings.
Thin layer imaging can extend the optical lithography limit down to sub-0.18 micrometers CD with 193 nm wavelength tools. Thin layer imaging can be implemented in a bi-layer approach, in which a patterned thin layer is transferred into an underlying
Publikováno v:
Scopus-Elsevier
The success of future gigascale integrated circuits (IC) chip technology depends critically upon the reduction of the interconnects RC delay time. This calls for the development of new low dielectric constant (low-k) insulators, and for work on their
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