Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Michael P. Hughey"'
Publikováno v:
Journal of Materials Science. 40:6345-6355
The stability of residual stress inherent on deposition in reactively sputtered alumina films is studied during thermal cycling and annealing, simulating temperature excursions experienced by the films during device fabrication and subsequent operati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e61e85d86842583f5d8dc6cf6530bc1
https://doi.org/10.1007/s10853-005-2070-0
https://doi.org/10.1007/s10853-005-2070-0
Autor:
Robert F. Cook, Michael P. Hughey
Publikováno v:
Thin Solid Films. 460:7-16
Massive irreversible increases in tensile stress (up to 2 GPa) on thermal cycling are demonstrated for plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films. Results give further evidence for the claim that this phenomenon is generic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46f9ff9296563daaec27bfd40e37c1f9
https://doi.org/10.1016/j.tsf.2004.01.047
https://doi.org/10.1016/j.tsf.2004.01.047
Autor:
Jeremy Thurn, Michael P. Hughey
Publikováno v:
Journal of Applied Physics. 95:7892-7897
The so-called “double-substrate technique,” a popular method for determining thermoelastic properties of films, involves deposition of a film on two (or more) substrates of differing coefficient of thermal expansion (CTE) and measuring the elasti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce6c6d9b80f3ad71af8e52a95a7cd95b
https://doi.org/10.1063/1.1753662
https://doi.org/10.1063/1.1753662
Autor:
Steven P. Bozeman, Srinivas L.N. Chakravarty, Laura C. Stearns, Brian L. Kelly, Robert F. Cook, David P. Harkens, Dylan J. Morris, Michael P. Hughey
Publikováno v:
Engineering Fracture Mechanics. 71:245-261
The four-point bend split-beam method is used to quantitatively determine the interfacial fracture resistance and crack velocity as a function of mechanical energy release rate of the weakest interface in a thin film stack. Various interfaces of impo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b074e177ce1588e9be769aeb7c5b02
https://doi.org/10.1016/s0013-7944(03)00100-0
https://doi.org/10.1016/s0013-7944(03)00100-0
Publikováno v:
ResearcherID
The potential of hybrid organic–inorganic membranes for separating organic molecules from air, based on a solubility-selective mechanism, was evaluated. Alumina membranes with average pore sizes near 5 and 12 nm were surface-derivatized with variou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8507aabd47e17c7525b23a5ce161b2a6
https://doi.org/10.1016/s0376-7388(01)00341-6
https://doi.org/10.1016/s0376-7388(01)00341-6
Autor:
Robert F. Cook, Michael P. Hughey
Publikováno v:
Applied Physics Letters. 85:404-406
The kinetics of irreversible tensile stress development during annealing of dielectric films fabricated by plasma-enhanced chemical vapor deposition (PECVD) are studied, and the hypothesis of a rate-limiting hydrogen diffusion process is tested. Extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0f9e92e4822f2de1a85d4975bd576f
https://doi.org/10.1063/1.1773364
https://doi.org/10.1063/1.1773364
Autor:
Michael P. Hughey, Robert F. Cook
Publikováno v:
MRS Proceedings. 766
Conventional, dense dielectrics serve as structural elements in Cu/low-k interconnect structures, and a full understanding of their thermo-mechanical properties is desired to help optimize device fabrication and avoid mechanical failure. Wafer curvat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96ae18226e0e1c1fe25804f078a0bf3
https://doi.org/10.1557/proc-766-e6.3
https://doi.org/10.1557/proc-766-e6.3
Autor:
Robert F. Cook, Michael P. Hughey
Publikováno v:
MRS Proceedings. 795
The thermo-mechanical behavior of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films are investigated during thermal cycling and annealing. It is well known that PECVD films have a large amount of incorporated hydrogen that evolve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad07c5d32694f0ff3e6f78e038388f9
https://doi.org/10.1557/proc-795-u1.6
https://doi.org/10.1557/proc-795-u1.6
Autor:
Michael P. Hughey, Robert F. Cook
Publikováno v:
Journal of Applied Physics. 97:114914
The kinetics of post-deposition irreversible tensile stress development on annealing in plasma-enhanced chemical-vapor-deposited silicon nitride films are described. Films were deposited at 150, 250, and 300 °C, and in situ stress measurements were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b97b078caa86f97eca51c81f7fd157
https://doi.org/10.1063/1.1927708
https://doi.org/10.1063/1.1927708