Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Michael O. Thompson"'
Autor:
Zeming Sun, Thomas Oseroff, Zhaslan Baraissov, Darrah K. Dare, Katrina Howard, Benjamin Francis, Ajinkya C. Hire, Nathan Sitaraman, Tomas A. Arias, Mark K. Transtrum, Richard Hennig, Michael O. Thompson, David A. Muller, Matthias U. Liepe
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 8, Pp n/a-n/a (2023)
Abstract Superconducting radio‐frequency (SRF) resonators are critical components for particle accelerator applications, such as free‐electron lasers, and for emerging technologies in quantum computing. Developing advanced materials and their dep
Externí odkaz:
https://doaj.org/article/6eb58f31955d41a18417f565db6d6962
Autor:
Zeming Sun, Darrah K. Dare, Zhaslan Baraissov, David A. Muller, Michael O. Thompson, Matthias U. Liepe
Publikováno v:
APL Materials, Vol 11, Iss 7, Pp 071118-071118-7 (2023)
Intermetallic Nb3Sn alloys have long been believed to form through Sn diffusion into Nb. However, our observations of significant oxygen content in Nb3Sn prompted an investigation of alternative formation mechanisms. Through experiments involving dif
Externí odkaz:
https://doaj.org/article/eff98edf0bb847cfbdcba386c57a9e50
Autor:
Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Naomi A. Pieczulewski, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, David A. Muller, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041102-041102-12 (2023)
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow β-Ga2O3 at a growth rate of ∼1 µm/h with control of the silicon doping concentration from 5 × 1016 to 1019 cm−3. In S-MBE, pre-oxidized gallium in the form of a molecular bea
Externí odkaz:
https://doaj.org/article/5c8dd87e738d470789d55d5159c1238e
Autor:
Eric S. Harmon, Michael O. Thompson, Charles R. Schmidtlein, James Turner, Alberto Gola, Giacomo Borghi, Stefano Merzi, Elena Moretti, Andrzej Krol
Publikováno v:
Medical Imaging 2023: Biomedical Applications in Molecular, Structural, and Functional Imaging.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0adcbf657fb94826814af470a1c69f3
https://doi.org/10.1117/12.2656891
https://doi.org/10.1117/12.2656891
Autor:
Yun Li, Yee Yan Tay, Pio J. S. Buenconsejo, William Manalastas, Wei Han Tu, Hong Kit Lim, Teddy Salim, Michael O. Thompson, Srinivasan Madhavi, Chor Yong Tay, Kwan W. Tan
High entropy materials made up of dissimilar elements have enormous potentials in various fields and applications such as catalysis, energy generation and bioengineering. Developments of facile rapid synthesis routes toward functional multicomponent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8f62027cce743f323261bde4eaf896a
https://hdl.handle.net/10356/166403
https://hdl.handle.net/10356/166403
Autor:
Sebastian Ament, Maximilian Amsler, Duncan R. Sutherland, Ming-Chiang Chang, Dan Guevarra, Aine B. Connolly, John M. Gregoire, Michael O. Thompson, Carla P. Gomes, R. Bruce van Dover
Publikováno v:
Science Advances
Description
Artificial intelligence accelerates the search and discovery of new metastable materials for energy applications.
Autonomous experimentation enabled by artificial intelligence offers a new paradigm for accelerating scientific di
Artificial intelligence accelerates the search and discovery of new metastable materials for energy applications.
Autonomous experimentation enabled by artificial intelligence offers a new paradigm for accelerating scientific di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bec8e1c49c4d087fe3c3240d65670267
https://resolver.caltech.edu/CaltechAUTHORS:20211220-590745000
https://resolver.caltech.edu/CaltechAUTHORS:20211220-590745000
Autor:
Ahmad E. Islam, Nicholas P. Sepelak, Kyle J. Liddy, Rachel Kahler, Daniel M. Dryden, Jeremiah Williams, Hanwool Lee, Katie Gann, Andreas Popp, Kevin D. Leedy, Nolan S. Hendricks, Jeff. L. Brown, Eric R. Heller, Weisong Wang, Wenjuan Zhu, Michael O. Thompson, Kelson D. Chabak, Andrew J. Green
Publikováno v:
Applied Physics Letters. 121:243501
We demonstrated 500 °C operation of field-effect transistors made using ultra-wide bandgap semiconductor β-Ga2O3. Metal–semiconductor field-effect transistors were fabricated using epitaxial conductive films grown on an insulating β-Ga2O3 substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f703b423e501ea37e570fe81286291
https://doi.org/10.1063/5.0113744
https://doi.org/10.1063/5.0113744
Autor:
Katie R. Gann, Celesta S. Chang, Ming-Chiang Chang, Duncan R. Sutherland, Aine B. Connolly, David A. Muller, Robert B. van Dover, Michael O. Thompson
Publikováno v:
Applied Physics Letters. 121:062102
Beta-phase gallium oxide ([Formula: see text]-Ga2O3) is a promising semiconductor for high frequency, high temperature, and high voltage applications. In addition to the [Formula: see text]-phase, numerous other polymorphs exist and understanding the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36c8847ee45f93a538d939838daca5f2
https://doi.org/10.1063/5.0087093
https://doi.org/10.1063/5.0087093
Autor:
Kwan Wee, Tan, Byungki, Jung, Jörg G, Werner, Elizabeth R, Rhoades, Michael O, Thompson, Ulrich, Wiesner
Publikováno v:
Science (New York, N.Y.). 349(6243)
Development of rapid processes combining hierarchical self-assembly with mesoscopic shape control has remained a challenge. This is particularly true for high-surface-area porous materials essential for applications including separation and detection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::60bdc88c4e1b35cbd0fd9f5f1984a15d
https://pubmed.ncbi.nlm.nih.gov/26138971
https://pubmed.ncbi.nlm.nih.gov/26138971
Publikováno v:
ECS Meeting Abstracts. :1372-1372
Dopant activation of In0.53Ga0.47As was determined following laser spike annealing (LSA) at temperatures up to 900 oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were measured using Pt thermistors and calibrated to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c386ca4a806eaa85dc92404a8e4cd700
https://doi.org/10.1149/ma2015-01/21/1372
https://doi.org/10.1149/ma2015-01/21/1372