Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Michael N. Fairchild"'
Autor:
Jeremy B. Wright, Saadat Mishkat Ul Masabih, Ganesh Balakrishnan, Daniel F. Feezell, Steven R. J. Brueck, Ashwin K. Rishinaramangalam, Michael N. Fairchild, D. M. Shima, Igal Brener
Publikováno v:
Journal of Electronic Materials. 44:1255-1262
We demonstrate the growth of ordered arrays of nonpolar $$\{ 10\bar{1}0\} $$ core–shell nanowalls and semipolar $$ \{ 10\bar{1}1\}$$ core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal org
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c04e6f3b255401194e1bda2bb5efeb
https://doi.org/10.1007/s11664-014-3456-z
https://doi.org/10.1007/s11664-014-3456-z
Autor:
L. Zhang, Petros Varangis, Michael N. Fairchild, Ashwin K. Rishinaramangalam, Stephen D. Hersee
Publikováno v:
Journal of Materials Research. 26:2293-2298
This study describes the elimination of threading dislocations (TDs) in GaN nanostructures. Cross-sectional transmission electron microscopy (XTEM) analysis reveals that the nominal [0001] line direction of a TD changes when it enters a GaN nanostruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71301a4e0db15b36d336ddbf6b1fdb11
https://doi.org/10.1557/jmr.2011.112
https://doi.org/10.1557/jmr.2011.112
Autor:
Jerome K. Hyun, Ilke Arslan, Rolf Erni, Stephen D. Hersee, Michael N. Fairchild, David A. Muller
Publikováno v:
Nano Letters. 9:4073-4077
While nanowires show increasing promise for optoelectronic applications, probing the subwavelength details of their optical modes has been a challenge with light-based techniques. Here we report the excitation of dielectric optical waveguide modes in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8027415571653dd66aebfa21297d6311
https://doi.org/10.1021/nl902266n
https://doi.org/10.1021/nl902266n
Autor:
Ashwin K. Rishinaramangalam, Rhett F. Eller, Mohsen Nami, Benjamin N. Bryant, S. R. J. Brueck, D. M. Shima, Daniel F. Feezell, Michael N. Fairchild, Ganesh Balakrishnan
Publikováno v:
SPIE Proceedings.
The growth of ordered arrays of group III-nitride nanostructures on c-plane gallium nitride (GaN) on sapphire using selective-area metal organic chemical vapor deposition (MOCVD) is presented. The growth of these nanostructures promotes strain relaxa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a9ce6c213d952e6cf7858821df0232e
https://doi.org/10.1117/12.2191726
https://doi.org/10.1117/12.2191726
Autor:
S. D. Hersee, Xinyu Sun, R. Bommena, D. Burckel, Steven R. J. Brueck, Andrew Frauenglass, Michael N. Fairchild, G. A. Garrett, M. Wraback
Publikováno v:
Journal of Applied Physics. 95:1450-1454
This article describes defect reduction mechanisms that are active during the growth of GaN by nanoheteroepitaxy on (0001) 6H SiC. Nanoheteroepitaxial (NHE) and planar GaN epitaxial films were grown and compared using transmission electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36f1f84d24655569dcdee54f718ddcad
https://doi.org/10.1063/1.1639952
https://doi.org/10.1063/1.1639952
Autor:
S. D. Hersee, R. Bommena, Shuang Zhang, Andrew Frauenglass, Xinyu Sun, David Zubia, Steven R. J. Brueck, D. Burckel, Michael N. Fairchild
Publikováno v:
IEEE Journal of Quantum Electronics. 38:1017-1028
We describe an ongoing study of nanoheteroepitaxy (NHE), the use of nanoscale growth-initiation areas for the integration of highly mismatched semiconductor materials. The concept and theory of NHE is briefly described and is followed by a discussion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b173fb0fd64b5035a7a32e1144246606
https://doi.org/10.1109/jqe.2002.800987
https://doi.org/10.1109/jqe.2002.800987
Autor:
Daniel F. Feezell, D. M. Shima, Michael N. Fairchild, Saadat Mishkat Ul Masabih, Ganesh Balakrishnan, Ashwin K. Rishinaramangalam
Publikováno v:
CLEO: 2014.
We demonstrate selective-area growth of patterned III-nitride core-shell nanowalls with nonpolar InGaN quantum well shells over large areas. Transmission electron microscopy and photoluminescence are utilized to examine the growth morphology and emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b66a61b0d53b75e790bd9d8f1edfd700
https://doi.org/10.1364/cleo_si.2014.sm2j.1
https://doi.org/10.1364/cleo_si.2014.sm2j.1
Autor:
Ashwin K. Rishinaramangalam, Mohsen Nami, Michael N. Fairchild, Darryl M. Shima, Ganesh Balakrishnan, S. R. J. Brueck, Daniel F. Feezell
Publikováno v:
Applied Physics Express. 9:059201
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d663abcea5fe864914dc5eb0d627e386
https://doi.org/10.7567/apex.9.059201
https://doi.org/10.7567/apex.9.059201
Autor:
Ashwin K. Rishinaramangalam, Michael N. Fairchild, S. R. J. Brueck, D. M. Shima, Ganesh Balakrishnan, Daniel F. Feezell, Mohsen Nami
Publikováno v:
Applied Physics Express. 9:032101
The fabrication of electrically injected triangular-nanostripe core–shell semipolar III–nitride LEDs (TLEDs) is demonstrated using interferometric lithography and catalyst-free bottom-up selective-area metal–organic chemical vapor deposition (M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04ae38f86f02034cd5853b169005ab49
https://doi.org/10.7567/apex.9.032101
https://doi.org/10.7567/apex.9.032101
Autor:
Stephen D. Hersee, Ganesh Balakrishnan, Daniel F. Feezell, Michael N. Fairchild, Ashwin K. Rishinaramangalam
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:03C107
This work highlights the development of three-dimensional (3D) GaN templates grown by metal organic vapor phase epitaxy (MOVPE). These templates are ideally suited for the subsequent growth of nonpolar (11¯00) m-plane InGaN-based coaxial wire/wall l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c3298970041ddcf438c56ec325de392
https://doi.org/10.1116/1.4792519
https://doi.org/10.1116/1.4792519