Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Michael L. Schuette"'
Publikováno v:
Semiconductor Science and Technology. 36:075005
Many challenges exist in understanding transport properties in metal-oxide thin film transistors (MO-TFTs). Microstructural disorder, dielectric/active layer interface trap states, and grain boundaries contribute to reductions in device properties su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44527b7505189d3ce74f57688d787b1c
https://doi.org/10.1088/1361-6641/abf663
https://doi.org/10.1088/1361-6641/abf663
Autor:
Kevin D. Leedy, Andrew J. Green, Gregg H. Jessen, Stephen E. Tetlak, Michael L. Schuette, Karynn A. Sutherlin, Antonio Crespo
Publikováno v:
IEEE Transactions on Electron Devices. 63:1921-1927
Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84dad3d8f69f7aa7ca79a4784ea9edea
https://doi.org/10.1109/ted.2016.2544200
https://doi.org/10.1109/ted.2016.2544200
Publikováno v:
Semiconductor Science and Technology. 35:124002
InGaZnO (IGZO) is an excellent semiconductor material for thin-film transistors (TFTs) used in direct-current and radio-frequency (RF) switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. IGZO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0babd2b704d631307eef02d79e26bc5
https://doi.org/10.1088/1361-6641/abbd0c
https://doi.org/10.1088/1361-6641/abbd0c
Autor:
Jason Anders, Michael L. Schuette, T. Cooper, M. Streby, Marian K. Kazimierczuk, Nicholas C. Miller, Kevin D. Leedy
Publikováno v:
Applied Physics Letters. 116:252105
Two methods of measuring the electronic transport properties of a material are transistor DC-voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can be done by electrostatic doping to lower resistance in the channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28382678688c22a594407c2d865b17c
https://doi.org/10.1063/5.0009676
https://doi.org/10.1063/5.0009676
Autor:
John Shalf, Paul Ohodnicki, Sreekant Narumanchi, Suman Datta, Srabanti Chowdhury, Eric Colby, Todd C. Monson, Andy Schwartz, Vicki Skonicki, Dushan Boroyevich, Tsu-Jae King Liu, Simon S. Ang, Justin R. Rattner, Valerie Taylor, Supratik Guha, Harry A. Atwater, Mark A. Hollis, Kerstin Kleese van Dam, Jerry A. Simmons, Matthew J. Marinella, Ramamoorthy Ramesh, Debdeep Jena, Katie Runkles, James A. Ang, Robinson E. Pino, Gil Herrera, Tom Theis, Michael Witherell, Jack Flicker, Khurram K. Afridi, Sayeef Salahuddin, Robert Kaplar, Joseph E. Harmon, Noble M. Johnson, Michele Nelson, Sriram Krishnamoorthy, Shadi Shahedipour-Sandvik, William J. Chappell, Daniel A. Reed, Peter M. Kogge, Jon Bock, Michael L. Schuette, Kenneth A. Jones, Keith S. Evans, Rick Stevens, Cherry Murray, Thomas M. Conte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0e09a10f40d1c05f9ad0dd024312976
https://doi.org/10.2172/1616249
https://doi.org/10.2172/1616249
Publikováno v:
Oxide-based Materials and Devices IX.
InGaZnO (IGZO) is a promising semiconductor material for thin-film transistors (TFTs) used in DC and RF switching applications, especially since it can be grown at low temperatures on a wide variety of substrates. Enhancement-mode TFTs based on IGZO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfca86e43dd0b426653825552aaa0482
https://doi.org/10.1117/12.2290625
https://doi.org/10.1117/12.2290625
Publikováno v:
SPIE Proceedings.
The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f67ee9bd7e6f7282a239aba8fee0d1b
https://doi.org/10.1117/12.2256188
https://doi.org/10.1117/12.2256188
Autor:
Debdeep Jena, Ronghua Wang, Patrick Fay, Jia Guo, Bo Song, Edward Beam, Berardi Sensale-Rodriguez, Zongyang Hu, Yuanzheng Yue, Shiping Guo, Faiza Afroz Faria, Andrew Ketterson, Paul Saunier, Xiang Gao, Huili Grace Xing, Michael L. Schuette
Publikováno v:
IEEE Transactions on Electron Devices. 61:747-754
The effects of fringing capacitances on the high-frequency performance of T-gate GaN high-electron mobility transistors (HEMTs) are investigated. Delay time components have been analyzed for gate-recessed InAlN/GaN HEMTs with a total gate length of 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881793e3950ca2184c1d76d8249ba6cf
https://doi.org/10.1109/ted.2014.2299810
https://doi.org/10.1109/ted.2014.2299810
Autor:
Shiping Guo, Tian Fang, Michael L. Schuette, Patrick Fay, Jia Guo, Berardi Sensale-Rodriguez, Edward Beam, Guowang Li, Huili Grace Xing, Debdeep Jena, Gregory L. Snider, Ronghua Wang, Jai Verma, Andrew Ketterson, Paul Saunier, Xiang Gao
Publikováno v:
Solid-State Electronics. 80:67-71
Delay analysis providing an alternative physical explanation on carrier transport, which may be more applicable to high electron mobility transistor (HEMT) channels with moderate carrier mobilities, has been applied to enhancement-mode (E-mode) and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a748ce4aa1a5b2fea2f14217658534ce
https://doi.org/10.1016/j.sse.2012.10.004
https://doi.org/10.1016/j.sse.2012.10.004
Autor:
Edward Beam, Paul Saunier, David Kopp, Patrick Fay, Wayne Johnson, Oleg Laboutin, Tomas Palacios, Yu Cao, Michael L. Schuette, Andrew Ketterson, Dong Seup Lee
Publikováno v:
physica status solidi c. 10:827-830
This paper reports depletion-mode In0.13Al0.83Ga0.04N/GaN high electron mobility transistors (HEMTs) on a SiC substrate with a record current gain cutoff frequency (fT) of 317 GHz. Thanks to the combination of high electron mobility, regrown n+ InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35b1cfb7fc78feb691197ec2bc874ce
https://doi.org/10.1002/pssc.201200541
https://doi.org/10.1002/pssc.201200541