Výsledky vyhledávání - "Michael L. Kerbaugh"

SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance

Autor: Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame

Publikováno v: ECS Transactions. 64:285-294

Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst

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Silicon Oxynitride As A Barrier Layer In A 3-Layer Photoresist System

Autor: Nguyen Essex Junction Van, Dianne L. Sundling, John A. Underhill, Michael L. Kerbaugh

Publikováno v: SPIE Proceedings.

A plasma-enhanced chemically vapor deposited (PECVD) silicon oxynitride (Si-O-N) was used in a 3-layer resist system in combination with a 0.42 na lens to provide device process developers with a means for extending photolithography down to 0.5 pm fe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::737997d85375660dd47cb1a2b1f7acd4
https://doi.org/10.1117/12.947819

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