Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Michael L. Kerbaugh"'
Autor:
Renata Camillo-Castillo, Bjorn Zetterlund, Pekarik John J, Vibhor Jain, Peter B. Gray, Marwan H. Khater, Adam W. Divergilio, Michael L. Kerbaugh, Q.Z. Liu, James W. Adkisson, D. L. Harame
Publikováno v:
ECS Transactions. 64:285-294
Development of SiGe HBTs in BiCMOS technology with both high f T and f MAX faces significant challenges. To increase f T, thinning the base and collector thickness is generally the first step to reduce the carrier transit times, but this increases th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b02641f1b8b2ba7829dd48493610e9
https://doi.org/10.1149/06406.0285ecst
https://doi.org/10.1149/06406.0285ecst
Publikováno v:
SPIE Proceedings.
A plasma-enhanced chemically vapor deposited (PECVD) silicon oxynitride (Si-O-N) was used in a 3-layer resist system in combination with a 0.42 na lens to provide device process developers with a means for extending photolithography down to 0.5 pm fe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::737997d85375660dd47cb1a2b1f7acd4
https://doi.org/10.1117/12.947819
https://doi.org/10.1117/12.947819
Conference
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Autor:
Mai, A., Lopez, I. Garcia, Rito, P., Nagulapalli, R., Awny, A., Elkhouly, M., Eissa, M., Ko, M., Malignaggi, A., Kucharski, M., Ng, H. J., Schmalz, K., Kissinger, D.
Publikováno v:
International Journal of High Speed Electronics & Systems; Mar-Jun2017, Vol. 26 Issue 1/2, p-1, 22p
Publikováno v:
IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference & Workshop (Cat No98CH36168); 1998, p34-42, 9p
Autor:
Magnus Willander, Hakan Pettersson
Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for
