Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Michael Kelzenberg"'
Autor:
Tyler Colenbrander, Jun Peng, Yiliang Wu, Michael Kelzenberg, Jing-Shun Huang, Clara MacFarland, Dennis Thorbourn, Robert Kowalczyk, Wousik Kim, John Brophy, Anh Dinh Bui, Dang-Thuan Nguyen, Hieu T. Nguyen, Harry A. Atwater, Thomas P. White, Jonathan Grandidier
Publikováno v:
Energy Advances. 2:298-307
Perovskite solar cells (PSCs) are studied in low-intensity low-temperature (LILT) conditions before and after low energy proton irradiation to characterize device performance at deep space mission-relevant light intensities and temperatures.
Autor:
Phillip R Jahelka, Harry A Atwater, Aaron Ptak, Christiane Frank-Rotsch, Frank Kiessling, Cora Went, Michael Kelzenberg
Publikováno v:
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC).
Autor:
Wen‐Hui Cheng, Matthias H. Richter, Ralph Müller, Michael Kelzenberg, Sisir Yalamanchili, Phillip R. Jahelka, Andrea N. Perry, Pin Chieh Wu, Rebecca Saive, Frank Dimroth, Bruce S. Brunschwig, Thomas Hannappel, Harry A. Atwater
Publikováno v:
Advanced Energy Materials. 12:2270153
Autor:
Wen‐Hui Cheng, Matthias H. Richter, Ralph Müller, Michael Kelzenberg, Sisir Yalamanchili, Phillip R. Jahelka, Andrea N. Perry, Pin Chieh Wu, Rebecca Saive, Frank Dimroth, Bruce S. Brunschwig, Thomas Hannappel, Harry A. Atwater
Publikováno v:
Advanced energy materials, 12(36):2201062. Wiley-VCH Verlag
Monolithic integrated photovoltaic-driven electrochemical (PV-EC) artificial photosynthesis is reported for unassisted CO2 reduction. The PV-EC structures employ triple junction photoelectrodes with a front mounted semitransparent catalyst layer as a
Autor:
Samuel Loke, Ali Naqavi, Emily Warmann, Pilar Espinet-Gonzalez, Nina Vaidya, Michael Kelzenberg, Harry A. Atwater
Publikováno v:
Optics Express. 30:28268
We report the design, fabrication, and characterization of ultralight coatings that employ Salisbury screen principles and the unique nature of ITO to achieve frequency selective broadband emissivity. Our coating comprises 60 nm SiO2, 10 nm ITO, 2.3