Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Michael Joseph Cich"'
Publikováno v:
Solid-State Electronics. 91:59-66
Simulations are used to explore the possibility of achieving breakdown voltage scaling using deep acceptors in the buffer for AlGaN/GaN HEMTs. The existence of an optimal range of deep level acceptor density (10 17 cm −3 ), for which the electric f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100fac42546e5f6db7b6950e9d3847b7
https://doi.org/10.1016/j.sse.2013.09.011
https://doi.org/10.1016/j.sse.2013.09.011
Autor:
T.A. Plut, Charles T. Sullivan, Michael Hightower, John F. Klem, Gary A. Patrizi, T. R. Fortune, Jascinda Clevenger, Samuel D. Hawkins, David Torres, Michael Joseph Cich, Albert G. Baca, Tracy Peterson
Publikováno v:
ECS Transactions. 6:11-22
Specially designed Pnp heterojunction bipolar transistors (HBT's) in the AlGaAs/GaAs material system can offer improved radiation response over commercially-available silicon bipolar junction transistors (BJT's). To be a viable alternative to the sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff7f45266632973752fb7faba62ecc2c
https://doi.org/10.1149/1.2731166
https://doi.org/10.1149/1.2731166
Autor:
Gregory A. Vawter, Mark Steven Derzon, Marino John Martinez, Michael Joseph Cich, Christopher D. Nordquist
Most common ionizing radiation detectors typically rely on one of two general methods: collection of charge generated by the radiation, or collection of light produced by recombination of excited species. Substantial efforts have been made to improve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a2642a95c3a26caa2d3ada56f7cbeeb
https://doi.org/10.2172/1008121
https://doi.org/10.2172/1008121
Autor:
Gregory M. Peake, Adam M. Rowen, Dustin Heinz Romero, Michael Joseph Cich, John F. Klem, Christian L. Arrington, Olga B. Spahn, Thomas J. Nash
Microfabrication methods have been applied to the fabrication of wire arrays suitable for use in Z. Self-curling GaAs/AlGaAs supports were fabricated as an initial route to make small wire arrays (4mm diameter). A strain relief structure that could b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41fb010d4c48c7ab8856eef7c909b43
https://doi.org/10.2172/945909
https://doi.org/10.2172/945909