Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Michael J. Zierak"'
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper a fully isolated bulk Si RF LDMOS device platform is reported which has been optimized for highly efficient mobile power conversion and RF power amplification. The self-aligned RF LDMOS NFET achieves a specific on-resistance R ds, on of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::289d5ca358377b6432aab06e4b8ec8fa
https://doi.org/10.1109/ispsd.2015.7123458
https://doi.org/10.1109/ispsd.2015.7123458
Autor:
Fernando Guarin, Gregory G. Freeman, David C. Ahlgren, David L. Harame, Robert A. Groves, S. St Onge, Ping-Chuan Wang, Jae-Sung Rieh, D. A. Herman, Bradley A. Orner, Steven H. Voldman, Kenneth J. Stein, Douglas D. Coolbaugh, J. Dunn, S. Subbanna, Louis D. Lanzerotti, Y. Hammad, Bernard S. Meyerson, Michael J. Zierak, Natalie B. Feilchenfeld, David R. Greenberg, Alvin J. Joseph
Publikováno v:
IBM Journal of Research and Development. 47:101-138
This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9370cf2d9ac9e0b2885e76630d2b92f0
https://doi.org/10.1147/rd.472.0101
https://doi.org/10.1147/rd.472.0101
Autor:
Michael J. Zierak, Natalie B. Feilchenfeld, Randy L. Wolf, Dawn Wang, Ted Letavic, Myra Boenke, Hanyi Ding, Chaojiang Li
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we introduce an isolated RF LDMOS NFET is for RF Power Amplifier (PA) and power management applications. The RF LDMOS NFET has demonstrated a drain-source turn-on resistance (R ds,on ) of 1.45ohm-mm, a cutoff frequency (Ft) greater tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2057252fdf237930e331e1b778c86b65
https://doi.org/10.1109/icsict.2014.7021359
https://doi.org/10.1109/icsict.2014.7021359
Autor:
Randy L. Wolf, Robert M. Rassel, Shyam Parthasarathy, Mccallum-Cook Ian, Hanyi Ding, K. Newton, Renata Camillo-Castillo, Anthony K. Stamper, Mark D. Jaffe, Alvin J. Joseph, James S. Dunn, Michael J. Zierak, Srikanth Srihari, Vibhor Jain, Nicholas Theodore Schmidt
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1651b1e12c438e8df1171a884ce0492b
https://doi.org/10.1109/bctm.2014.6981278
https://doi.org/10.1109/bctm.2014.6981278
Autor:
Eric A. Johnson, Derrick Liu, Mark D. Jaffe, Anthony K. Stamper, Shyam Parthasarthy, Michael J. Zierak, James S. Dunn, Alvin J. Joseph, Renata Camillo-Castillo, Hanyi Ding, Robert M. Rassel, Venkata Vanakuru, Jeff Gambino, Santosh Sharma
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c611243ecd4ee603fe792c409d4bc6d4
https://doi.org/10.1109/bctm.2013.6798183
https://doi.org/10.1109/bctm.2013.6798183
Autor:
Rick Phelps, Theodode Letavic, Natalie B. Feilchenfeld, Donald J. Cook, Michael J. Zierak, Santosh Sharma, Yun Shi
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper presents complimentary 85V-rated LDMOS devices integrated in a 180nm power management technology platform. The devices are fabricated using a design technique which utilizes tapered dielectric regions in combination with patterned floating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de0de10eba9b1521b7501d9f36fd0d8
https://doi.org/10.1109/ispsd.2013.6694423
https://doi.org/10.1109/ispsd.2013.6694423
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::680dcea7dc29df2e8835d3376d5fc255
https://doi.org/10.1109/bipol.2008.4662721
https://doi.org/10.1109/bipol.2008.4662721
Autor:
J. Rascoe, Ebenezer E. Eshun, Benjamin T. Voegeli, S. St Onge, Douglas D. Coolbaugh, P. Demag, Peter J. Geiss, Michael J. Zierak, Natalie B. Feilchenfeld, A. Norris, Bradley A. Orner, David C. Sheridan, J. Dunn, T. Larsen, J. Trappasso, J. He, J. Greco, R. Hussain, V. Patel, Michael L. Gautsch, V. Ramachandrian, Peter B. Gray, Wade J. Hodge, Douglas B. Hershberger, Ryan Wayne Wuthrich, Robert M. Rassel, Louis D. Lanzerotti, D. Jordan, Steven H. Voldman
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f876a1838dd55bdb0081b70fd81a5fef
https://doi.org/10.1109/bipol.2002.1042917
https://doi.org/10.1109/bipol.2002.1042917
Autor:
Gregory G. Freeman, Bradley A. Orner, S. Subbanna, Basanth Jagannathan, Robert A. Groves, Douglas D. Coolbaugh, Peter J. Geiss, J. Malinowski, S. St Onge, J. Jeng, M. Gordon, K. Stein, D. L. Harame, Douglas B. Hershberger, David C. Ahlgren, S. Kilpatrick, J. Dunn, Peter B. Gray, L. Lanzerotti, R. Johnson, Kathryn T. Schonenberg, Michael J. Zierak, Natalie B. Feilchenfeld, Alvin J. Joseph
Publikováno v:
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
A new base-after-gate integration scheme has been developed to integrate a 47 GHz f/sub t/, 65 GHz F/sub max/SiGe HBT process with a 0.24 /spl mu/m CMOS technology having 0.18 /spl mu/m L/sub eff/ and 5 nm gate oxide. We discuss the benefits and chal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8abbecd624f03e242f5f04f857d6217b
https://doi.org/10.1109/bipol.1999.803539
https://doi.org/10.1109/bipol.1999.803539
Autor:
David C. Ahlgren, Gregory G. Freeman, Robert A. Groves, Jack O. Chu, Ryan Wayne Wuthrich, Kathryn T. Schonenberg, Z.X. He, Basanth Jagannathan, Peter J. Geiss, J. Malinowski, Louis D. Lanzerotti, Bradley A. Orner, J. Dunn, S. Subbanna, Mounir Meghelli, H. Chen, David Harame, Xuefeng Liu, K. Watson, Michael J. Zierak, Douglas D. Coolbaugh, Jeffrey B. Johnson, Vidhya Ramachandran, Peter B. Gray, R. Johnson, D. Jadus, Alvin J. Joseph, Alexander V. Rylyakov
Publikováno v:
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
A BiCMOS technology is presented that integrates a high performance NPN (f/sub T/=120 GHz and f/sub max/=100 GHz), ASIC compatible 0.11 /spl mu/m L/sub eff/ CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7455b124b49f666e2bf90f72c13d7b1e
https://doi.org/10.1109/bipol.2001.957877
https://doi.org/10.1109/bipol.2001.957877