Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Michael J. Trainor"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:2180-2186
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high-performance analog circuits fabricated in thin-film technologies. The quality of saturation is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ab1ea5cb3b2fc5ccf38932634a9d35a
https://doi.org/10.1109/ted.2012.2198823
https://doi.org/10.1109/ted.2012.2198823
Autor:
Nigel D. Young, Xiaojun Guo, John M. Shannon, Michael J. Trainor, S. R. P. Silva, Radu A. Sporea
Publikováno v:
Solid-State Electronics. :246-249
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The structures enable a direct comparison to be made between a SGT and a standard thin-film field-effect transistor (FET) on the same device. SGTs having exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f08c7c570422cf4b296cab0b0d9409f5
https://doi.org/10.1016/j.sse.2011.06.010
https://doi.org/10.1016/j.sse.2011.06.010
Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::817e1cabcb41c5052e746f9565cacad2
https://surrey.eprints-hosting.org/807784/
https://surrey.eprints-hosting.org/807784/
Publikováno v:
IEEE Transactions on Electron Devices. 48:1145-1151
We report results on thin-film transistors (TFTs) made from a new hybrid process in which amorphous silicon (a-Si) is first converted to polycrystalline silicon (poly-Si) using Ni-metal-induced lateral crystallization (MILC), and then improved using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c7a12430ac59a40d0d83aaf101a4c5
https://doi.org/10.1109/16.925240
https://doi.org/10.1109/16.925240
Autor:
Michael J. Trainor, Stanley D. Brotherton, John R. A. Ayres, C. Glaister, J. P. Gowers, David J. Mcculloch, Carole Anne Fisher, M.J. Edwards
Publikováno v:
Thin Solid Films. 337:188-195
The technology for the fabrication of poly-Si TFTs on glass substrates has now reached a level of maturity such that the first commercial products are becoming available. The technology choice will be briefly reviewed and the reasons for the preferre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28d2062324a751762422900ac1c9514f
https://doi.org/10.1016/s0040-6090(98)01176-6
https://doi.org/10.1016/s0040-6090(98)01176-6
Autor:
David J. Mcculloch, J. P. Gowers, Stanley D. Brotherton, Michael J. Trainor, John R. A. Ayres
Publikováno v:
Journal of Applied Physics. 82:4086-4094
The influence of film thickness and incident excimer laser energy density on the properties of poly-Si thin film transistors has been investigated and a coherent pattern of behavior has been identified which establishes controlled melt-through of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af295ddcbb4a899fb778ed65bb0133fa
https://doi.org/10.1063/1.365719
https://doi.org/10.1063/1.365719
Publikováno v:
2010 Proceedings of the European Solid State Device Research Conference.
Self-aligned Schottky-source source-gated transistors (SGTs) have been made in polysilicon. The structures enable a direct comparison to be made between a SGT and a standard thin-film field-effect transistor (FET) on the same device. SGTs having exce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab26e218ee42ee206ec88c29eaf82f06
https://doi.org/10.1109/essderc.2010.5618382
https://doi.org/10.1109/essderc.2010.5618382
Publikováno v:
68th Device Research Conference.
The source-gated transistor (SGT) is a new type of transistor in which the current is controlled by a potential barrier at the source and by a gate which modulates the effective height of the source barrier. It is an ideal device architecture to be u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::682e35b043dc4ffd3be3c01f36141a79
https://doi.org/10.1109/drc.2010.5551977
https://doi.org/10.1109/drc.2010.5551977
Thin-film, self-aligned source-gated transistors (SGTs) have been made in polysilicon. The very high output impedance of this type of transistor makes it suited to analog circuits. Intrinsic voltage gains of greater than one thousand have been measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19a5692559ab71cf281ec9de5dd53d99
https://surrey.eprints-hosting.org/7852/
https://surrey.eprints-hosting.org/7852/
Autor:
Elizabeth Hallworth, Andrew Pearson, Michael J. Trainor, Nigel D. Young, Sander J. Roosendaal, David J. Mcculloch, Peter W. Green, Sandra Godfrey, Soo Young Yoon, Richard W. Wilks
Publikováno v:
MRS Proceedings. 769
A variety of polymer materials including polyimide (PI), polyarylate (PAR), polynorbonene (PNB) and polyethersulphone (PES) have been studied for use as substrates in the formation of active matrix displays based upon polycrystalline silicon (poly-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6057e781fd51828ac37df98da5784c6a
https://doi.org/10.1557/proc-769-h2.1
https://doi.org/10.1557/proc-769-h2.1