Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Michael J. Tambe"'
Publikováno v:
Nano Letters. 10:4584-4589
The deposition of n-GaAs shells is explored as a method of n-type doping in GaAs nanowires grown by the Au-mediated metal-organic chemical vapor deposition. Core-shell GaAs/n-GaAs nanowires exhibit an unintended rectifying behavior that is attributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b35d68f324dc4c8f3b0eee93bf7d846
https://doi.org/10.1021/nl102594e
https://doi.org/10.1021/nl102594e
Autor:
Silvija Gradečak, Shenqiang Ren, Ni Zhao, Samuel C. Crawford, Vladimir Bulovic, Michael J. Tambe
Publikováno v:
Nano letters. 11(2)
We demonstrate an organic/inorganic solar cell architecture based on a blend of poly(3-hexylthiophene) (P3HT) and narrow bandgap GaAs nanowires. The measured increase of device photocurrent with increased nanowire loading is correlated with structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25548cd43e851954b6b479ac41a22c51
https://pubmed.ncbi.nlm.nih.gov/21171629
https://pubmed.ncbi.nlm.nih.gov/21171629
Publikováno v:
Nanotechnology. 21(16)
Semiconductor nanowires have emerged as promising materials for fundamental studies in quantum-confined systems and applications in nanophotonics and electronics, but major challenges remain in controlling nanowire properties, including their positio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be7b00b5688950c7a3cef837d464cd4b
https://pubmed.ncbi.nlm.nih.gov/20351413
https://pubmed.ncbi.nlm.nih.gov/20351413
The novel properties of semiconductor nanowires is a great challenge for nanoelectronics and photonics application. Depending on the band gap and size of particular semiconductor nanowires, the shift in absorption/emission is observed. GaAs nanowires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf8faf43a9e55646aade58108433c526
https://www.bib.irb.hr/481971
https://www.bib.irb.hr/481971
Publikováno v:
Integrated Photonics Research, Silicon and Nanophotonics and Photonics in Switching.
Application of semiconductor nanowire heterostructures as wavelength-tunable nanoscale lasers and light emitting diodes are discussed. Cathodoluminescence in TEM directly correlates structural and optical properties of nanowire heterostructures with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6ed0fdf472db79206e458840b89783d
https://doi.org/10.1364/iprsn.2010.iwe1
https://doi.org/10.1364/iprsn.2010.iwe1
Publikováno v:
Nano letters. 8(5)
We report the growth and characterization of ternary AlxGa1− xAs nanowires by metalorganic chemical vapor deposition as a function of temperature and V/III ratio. Transmission electron microscopy and energy dispersive X-ray spectroscopy show that,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::97c65621592110fcf128bb8748d866be
https://pubmed.ncbi.nlm.nih.gov/18386937
https://pubmed.ncbi.nlm.nih.gov/18386937
Autor:
Vladimir Bermanec, Michael J. Tambe, Anđelka Tonejc, Mirjana Bijelić, Antun Tonejc, Silvija Gradečak, Hrvoje Posilović
Publikováno v:
EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany ISBN: 9783540852254
The novel properties of semiconductor nanowires are interesting [1] for application and could be useful for application in nanoelectronics and photonics. Depending on the band gap and size of particular semiconductor nanowires, the shift in absorptio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::498a067ee5876c69a99e7f4ab9553f5e
https://www.bib.irb.hr/375729
https://www.bib.irb.hr/375729
We report the controlled growth of vertically aligned GaAs/AlGaAs core-shell nanowires. By optimizing the shell deposition temperature and catalyst density we maintain high temperature stability and achieve defect-free epitaxial AlGaAs shell depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::046e42f061bc7c05ec845d78e1482322
https://www.bib.irb.hr/368856
https://www.bib.irb.hr/368856
The behavior of metals at high pressure is of great importance to the fields of shock physics, geophysics, astrophysics, and nuclear materials. In order to further understand the properties of metals at high pressures we studied the equation of state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fa005d459b5a6869942b5ffce400ecb
Publikováno v:
Nano Letters; Nov2010, Vol. 10 Issue 11, p4584-4589, 6p