Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Michael J. O'Loughlin"'
Publikováno v:
Wide Bandgap Semiconductors for Power Electronics. :75-92
Autor:
Scott Allen, Jeff B. Casady, Heather O'Brien, Aderinto Ogunniyi, Daniel J. Lichtenwalner, Brett Hull, Yemane Lemma, Al Burk, Matthew McCain, Edward Van Brunt, Aivars J. Lelis, John W. Palmour, Craig Capell, Jim Richmond, Shadi Sabri, Sei Hyung Ryu, David Grider, Michael J. O'Loughlin, Charlotte Jonas
Publikováno v:
Materials Science Forum. 963:651-654
High performance 15 kV n-GTOs were demonstrated for the first time in 4H-SiC. The device utilized a 140 μm thick, lightly doped n-type drift layer, with 1450°C lifetime enhancement oxidation, which resulted in a carrier lifetime of 17.5 μs. The p+
Autor:
Brett Hull, Al Burk, Donald A. Gajewski, Michael J. O'Loughlin, Yuri I. Khlebnikov, Jim Richmond, Scott Allen, Elif Balkas, John W. Palmour, Sei Hyung Ryu, Edward Van Brunt
Publikováno v:
Materials Science Forum. 963:805-810
In this work, we report the results of industrial qualification tests run on medium voltage SiC MOSFETs rated for 3.3 kV/40 A and 10 kV/15 A. The JEDEC JESD47J.01 standard was used as a guideline to conduct HTRB (High Temperature, Reverse Bias), HTGB
Autor:
Aivars J. Lelis, Brett Hull, Jon Zhang, Yemane Lemma, Sei Hyung Ryu, Shadi Sabri, Charlotte Jonas, Heather O'Brien, Aderinto Ogunniyi, Scott Allen, Edward Van Brunt, Jim Richmond, Matthew McCain, Daniel J. Lichtenwalner, Jeff B. Casady, Craig Capell, David Grider, Albert A. Burk, John W. Palmour, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. 924:633-636
An investigation into the increased leakage currents and reduced blocking voltages associated with 1450°C lifetime enhancement oxidation for the 4H-SiC p-GTOs is presented. Roughening of the 4H-SiC surface due to localized crystallization of SiO2, o
Autor:
Michael J. O'Loughlin
The 1980s and 1990s, the height of the AIDS crisis in the United States, was decades ago now, and many of the stories from this time remain hidden: A Catholic nun from a small Midwestern town packs up her life to move to New York City, where she thro
Autor:
Scott Allen, Jack Clayton, David Grider, Edward Van Brunt, Sei Hyung Ryu, Michael J. O'Loughlin, Khiem Lam, Yemane Lemma, John W. Palmour, Jim Richmond, Craig Capell, Charlotte Jonas
Publikováno v:
Materials Science Forum. 858:945-948
Ultra High Voltage (UHV) 4H-SiC N-IGBTs, with drift layer thicknesses ranging from 140 μm to 240 μm, were fabricated and characterized. A blocking voltage of 25 kV, and a forward voltage drop (VF) of 12.8 V were measured from a 9 mm x 9 mm device w
Publikováno v:
Materials Science Forum. 858:167-172
Initial results from a custom, 3x150 mm horizontal hot-wall, SiC Vapor-Phase epitaxial growth reactor (VPE), with full planetary motion are reported. Epitaxial layer properties are compared with those grown on previously reported 1x150 mm hot-wall an
Autor:
Vipindas Pala, Daniel J. Lichtenwalner, Brett Hull, A. Burk, Joe Sumakeris, Edward Van Brunt, S.T. Allen, Sei-Hyung Ryu, Michael J. O'Loughlin, John W. Palmour
Publikováno v:
MRS Advances. 1:81-89
Due to the wide bandgap and other key materials properties of 4H-SiC, SiC MOSFETs offer performance advantages over competing Si-based power devices. For example, SiC can more easily be used to fabricate MOSFETs with very high voltage ratings, and wi
Autor:
Vipindas Pala, Charles W. Tipton, John W. Palmour, Jim Richmond, Edward Van Brunt, Charles Scozzie, Lin Cheng, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :847-850
In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 μm and 230 μm), lightly doped N-drift layers with an appropriate edge termination. Prior to the devic