Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Michael J. Lercel"'
Publikováno v:
SPIE Proceedings.
SEMATECH has initiated a program to accelerate the development and commercialization of multi-electron beam based technologies as successor for wafer defect inspection in high volume semiconductor manufacturing. This paper develops the basic electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb773021ce0208bf6b266b1a5e145b1
https://doi.org/10.1117/12.2069302
https://doi.org/10.1117/12.2069302
Publikováno v:
Microelectronic Engineering. :467-473
Electron-beam stencil lithography, a next-generation lithography technology planned for the sub-100 nm nodes, requires the manufacture of a low distortion mask. Fabrication and pattern transfer processes were modeled for the 4-inch format mask using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05562552b0dddedf9ab7ed0dcec76131
https://doi.org/10.1016/s0167-9317(01)00470-1
https://doi.org/10.1016/s0167-9317(01)00470-1
Autor:
C. S. Whelan, David L. Allara, Harold G. Craighead, Dustin W. Carr, K. Seshadri, Michael J. Lercel
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 15:1446-1450
Novel processes have been developed for transferring patterns using self-assembled monolayer (SAM) electron beam resists. Because the SAMs are very thin, high-selectivity processes are required for effective substrate modification. Two separate techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f34a8efce7a48b9fad65ab457c18a38
https://doi.org/10.1116/1.580559
https://doi.org/10.1116/1.580559
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 14:1844-1849
Self‐assembled monolayers of octadecylthiol on GaAs and octadecylsiloxanes on titanium, aluminum, and silicon have been used as electron beam resists for plasma etching into the substrates. An electron cyclotron resonance source was used to excite
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e945da4211008da7b87ff3138c1471af
https://doi.org/10.1116/1.580347
https://doi.org/10.1116/1.580347
Autor:
Harold G. Craighead, K. Seshadri, Michael J. Lercel, David L. Allara, Atul N. Parikh, Karl D. Froyd
Publikováno v:
The Journal of Physical Chemistry. 100:15900-15909
Highly organized monolayers formed from the self-assembly of octadecyl derivatives on oxide-covered Si and Ti substrates have been exposed to electron beam impact under typical conditions used in lithographic patterning. A combination of X-ray photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b059ecfc74cc93b534a0c41b59bc7f09
https://doi.org/10.1021/jp960705g
https://doi.org/10.1021/jp960705g
Autor:
Richard C. Tiberio, David L. Allara, Michael J. Lercel, G. F. Redinbo, M. J. Rooks, C. W. Sheen, Harold G. Craighead
Publikováno v:
Microelectronic Engineering. 27:43-46
Self-assembled monolayers have been demonstrated to perform as high-resolution electron beam resists with minimum resolutions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e730a5e71b39957652ed5752961fed
https://doi.org/10.1016/0167-9317(94)00052-v
https://doi.org/10.1016/0167-9317(94)00052-v
Autor:
Michael J. Lercel, Chirag Rajyaguru, Richard L. Sandstrom, Bruno La Fontaine, David W. Myers, Kevin Zhang, Toshi Ishihara, Silvia De Dea, Georgiy O. Vaschenko, Norbert R. Bowering, Robert N. Jacques, Jonathan Grava, Alex I. Ershov, Daniel J. W. Brown, Robert A. Bergstedt, Christian J. Wittak, Imtiaz Ahmad, Michael R. Woolston, Alexander N. Bykanov, Vladimir B. Fleurov, David C. Brandt, Peter I. Porshnev, Alexander Schafgans, Shailendra N. Srivastava, Robert J. Rafac, Rod D. Simmons, Wayne J. Dunstan, Palash P. Das, Igor V. Fomenkov, Peter Baumgart, Yezheng Tao
Publikováno v:
SPIE Proceedings.
Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8bc072a3053e6f2a970ff56744d65a7
https://doi.org/10.1117/12.916521
https://doi.org/10.1117/12.916521
Autor:
Igor V. Fomenkov, Daniel J. W. Brown, Michael J. Lercel, David W. Myers, Alexander N. Bykanov, Alex I. Ershov, Bruno La Fontaine, David C. Brandt, Norbert R. Bowering
Publikováno v:
SPIE Proceedings.
Through a number of experimental studies carried out on various experimental test stands we are characterizing the scaling of EUV power and collector lifetime. The current performance of the first generation of EUV sources to support EUV lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4093957ea52cb872c55d858a54798f80
https://doi.org/10.1117/12.916531
https://doi.org/10.1117/12.916531
Autor:
David C. Brandt, Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Richard L. Sandstrom, Bruno M. La Fontaine, Michael J. Lercel, Alexander N. Bykanov, Norbert R. Böwering, Georgiy O. Vaschenko, Oleh V. Khodykin, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Daniel J. Golich, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Christian J. Wittak, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt
Publikováno v:
SPIE Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c48fdee068e5e5df726d6a39767d5b6
https://doi.org/10.1117/12.882208
https://doi.org/10.1117/12.882208
Publikováno v:
SPIE Proceedings.
Extending lithography to 32 nm and 22 nm half pitch requires the introduction of new lithography technologies, such as EUVL or high-index immersion, or new techniques, such as double patterning. All of these techniques introduce large changes into th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecc8efa536189b3302672a78ad6c09be
https://doi.org/10.1117/12.793129
https://doi.org/10.1117/12.793129