Zobrazeno 1 - 10
of 272
pro vyhledávání: '"Michael J Uren"'
Autor:
Matthew D. Smith, Jerome A. Cuenca, Daniel E. Field, Yen-chun Fu, Chao Yuan, Fabien Massabuau, Soumen Mandal, James W. Pomeroy, Rachel A. Oliver, Michael J. Uren, Khaled Elgaid, Oliver A. Williams, Iain Thayne, Martin Kuball
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035306-035306-5 (2020)
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using m
Externí odkaz:
https://doaj.org/article/8fedbae859214ba68c92f35c0dcab39c
Publikováno v:
Semiconductor Science and Technology.
Multichannel RF power amplifiers offer high frequency operation, high current and RF power, combined with excellent linearity. 3D and 2D simulation is used to investigate how changes in device architecture impact both the linearity and off-state reli
Autor:
Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Taylor Moule, Stefano Dalcanale, Akhil S. Kumar, Michael J. Uren, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Martin Kuball
Publikováno v:
IEEE Transactions on Electron Devices. 69:75-81
Publikováno v:
IEEE Transactions on Electron Devices. 68:5055-5061
The design space of Ga2O3-based devices is severely constrained due to its low thermal conductivity and absence of viable p-type dopants. In this work, we discuss the limits of operation of a novel Ga2O3–Al2O3–diamond-based super-junction device
Autor:
Zequan Chen, Abhishek Mishra, Aditya K. Bhat, Matthew D. Smith, Michael J. Uren, Sandeep Kumar, Masataka Higashiwaki, Martin Kuball
Publikováno v:
Applied Physics Express. 16:044002
Frequency dispersion of impedance in lateral β-Ga2O3 MOSFETs has been characterized and a model has been established to explain the behavior. The dispersion occurs due to resistive and capacitive coupling between terminal contact pads and the buried
Autor:
Ken Nagamatsu, Josephine B. Chang, Martin Kuball, Stefano Dalcanale, Michael J. Uren, Justin Parke, Robert S. Howell
Publikováno v:
IEEE Transactions on Electron Devices. 68:2220-2225
We report a novel noise analysis for the leakage current during time-dependent dielectric degradation under bias stress, illustrated using AlGaN/GaN superlattice castellated field-effect transistors (SLCFETs). Gate step stress is a standard approach
Autor:
James W Pomeroy, Jim Carroll, Feiyuan Yang, Martin Kuball, Thomas Gerrer, Daniel Francis, Marty Yarborough, Larry Witkowski, Michael J. Uren, Brian Loran
Publikováno v:
IEEE Transactions on Electron Devices. 68:1530-1536
Reliable operation of high power GaN amplifiers at maximum performance relies on the mutual optimization of several design parameters constrained by a defined thermal budget. On high thermal conductivity, substrates, such as SiC and diamond, undergo
Publikováno v:
IEEE ELECTRON DEVICE LETTERS
Substrate ramps and stepped stress transient measurements are applied to study vertical charge transport mechanisms in GaN-on-Si power HEMTs. By choosing appropriate bias points for substrate stress it is possible to single out the dominant charge tr
Publikováno v:
IEEE Transactions on Electron Devices. 67:5460-5465
Buffer traps in GaN RF heterostructure field-effect transistors (HFETs) provide a high dc output resistance on one hand but induce the current collapse effect on the other hand. Here, we show that traps do not merely confine the carriers into the cha